Qimonda Ag

Ole Bosholm

Detlef Weber

Marco Lepper

Grit Bonsdorf

Frank Pietzschmann

Goetz Springer

The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

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Dresden, Germany

Ole Bosholm