Asml Netherlands B.v.

Koninklijke Philips Corporation N.v.

Carl Zeiss Smt Gmbh

Asml Holding N.v.

Stichting Nationaal Lucht&#x2014;en Ruimtevaartlaboratorium

Olav Waldemar Vladimir Frijns

Vadim Yevgenyevich Banine

Erik Roelof Loopstra

Andrey Alexandrovich Nikipelov

Pieter Willem Herman De Jager

Wouter Joep Engelen

Johannes Hubertus Josephina Moors

Gosse Charles De Vries

Johannes Christiaan Leonardus Franken

Johannes Antonius Gerardus Akkermans

Leonardus Adrianus Gerardus Grimminck

Maarten Marinus Johannes Wilhelmus Van Herpen

Andrei Mikhailovich Yakunin

Wouter Anthon Soer

Niels Machiel Driessen

Petrus Rutgerus Bartraij

Andelko Katalenic

Sjoerd Nicolaas Lambertus Donders

Nicolaas Ten Kate

Derk Jan Wilfred Klunder

Martinus Cornelis Maria Verhagen

Jan Bernard Plechelmus Van Schoot

Gerardus Hubertus Petrus Maria Swinkels

Han-Kwang Nienhuys

Vladimir Mihailovitch Krivtsun

Borgert Kruizinga

Teis Johan Coenen

Rilpho Ludovicus Donker

Ivo Vanderhallen

Marcus Adrianus Van De Kerkhof

Johannes Henricus Wilhelmus Jacobs

Michel Riepen

Marcel Mathijs Theodore Marie Dierichs

Antonius Theodorus Anna Maria Derksen

Franciscus Johannes Joseph Janssen

Jacobus Johannus Leonardus Hendricus Verspay

Theodorus Petrus Maria Cadee

Markus Franciscus Antonius Eurlings

Richard Joseph Bruls

Ramon Pascal Van Gorkom

Wilhelmus Josephus Box

Ruud Antonius Catharina Maria Beerens

Lucas Henricus Johannes Stevens

Yang-Shan Huang

Konstantin Nikolaevitch Koshelev

Stig Bieling

Michael Jozef Mathijs Renkens

Hendrikus Gijsbertus Schimmel

Antonius Theodorus Wilhelmus Kempen

Alexander Matthijs Struycken

Robert Gabriël Maria Lansbergen

Wilhelmus Patrick Elisabeth Maria Op 't Root

Harm-Jan Voorma

Erik René Kieft

Edwin Te Sligte

Ronald Peter Albright

Kurt Gielissen

Otger Jan Luiten

Zhuangxiong Huang

Richard Henricus Adrianus Van Lieshout

Manish Ranjan

Vladimir Vital'Evitch Ivanov

Uwe Bruno Heini Stamm

Robert Rafilevitch Gayazov

Viacheslav Medvedev

Kursat Bal

Parham Yaghoobi

Gerrit Van Donk

Aukje Arianne Annette Kastelijn

Sipke Jacob Bijlsma

Karl Robert Umstadter

Hermanus Kreuwel

Wilhelmus Patrick Elisabeth Maria Op'T Root

Henk Jan Van Gerner

Derek Jan Wilfred Klunder

Yurii Victorovitch Sidelkov

Vsevolod Grigorevitch Koloshnikov

Maurice Piërre Marie Arthur Limpens

Sjoerd Frans De Vries

Thomas Maarten Raasveld

Eray Uzgören

Vadim Yevgenyevich Joseph Banine

Georgi Nenchev Nenchev

Lucas Johannes Peter Ament

Marcus Petrus Scheepers

Vladimir Litvinenko

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector () and an electron accelerator (). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target () and a beam splitter () arranged to direct the a first portion of the electron beam along a first path towards a first side of the target () and to direct a second portion of the electron beam along a second path towards a second side of the target ().

Radioisotope production

A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

Beam delivery apparatus and method

A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

Lithographic method

A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Electron injector and free electron laser

A radiation collector comprising a first collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a first location at a distance from the radiation collector, a second collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a second location at said distance from the radiation collector, wherein the first location and the second location are separated from one another.

Radiation collector, radiation source and lithographic apparatus

A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

A radiation source having a fuel stream generator () that generates and directs a fuel stream () along a trajectory towards a plasma formation location (). A pre-pulse laser radiation assembly directs a first beam of laser radiation () at the fuel stream at the plasma formation location to generate a modified fuel target (). A main pulse laser radiation assembly directs a second beam of laser radiation () at the modified fuel target at the plasma formation location to generate a radiation generating plasma (). A collector () collects the radiation and directs it along an optical axis () of the radiation source. The first beam of laser radiation being directed toward the fuel stream substantially along the optical axis.

Radiation source

A source-collector device includes a target unit having a target surface of plasma-forming material and a laser unit to generate a beam of radiation directed onto the target surface to form a plasma from said plasma-forming material. A contaminant trap is provided to reduce propagation of particulate contaminants generated by the plasma. A radiation collector includes a one or more grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom, and a filter is configured to attenuate at least one wavelength range of the beam.

Source-collector device, lithographic apparatus, and device manufacturing method

A grazing incidence reflector () for EUV radiation includes a first mirror layer () and a multilayer mirror structure () beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.

Grazing incidence reflectors, lithographic apparatus, methods for manufacturing a grazing incidence reflector and methods for manufacturing a device

A method to align a discharge axis of a discharge radiation source with respect to optics of the lithographic apparatus includes creating a discharge in a substance in a discharge space between an anode and a cathode to form a plasma so as to generate electromagnetic radiation. The discharge is triggered by irradiating an area on a surface proximate the discharge space with an energetic beam. The position of the area is controlled in response to a property of the radiation in the lithographic apparatus and/or the temperature of a collector of the lithographic apparatus. Controlling the position of the area which is irradiated improves alignment of the discharge axis with the different lithographic modules, such as the contamination barrier, the illumination system, the substrate table and/or the projection system.

Correction of spatial instability of an EUV source by laser beam steering

A lithographic apparatus includes a radiation system for providing a beam of radiation from radiation emitted by a radiation source. The radiation system includes a contaminant trap for trapping material emanating from the radiation source. The rotation contaminant trap includes a multiple number of elements extending in a radial direction from a common rotation trap axis and being arranged for allowing contaminant material emanating from the radiation source to deposit during propagation of the radiation beam in the radiation system. The radiation system further includes a contaminant catch for receiving contaminant material particles from the rotation trap elements, the contaminant catch having a constitution, during operation of the radiation, for retaining said contaminant material particles.

Lithographic apparatus, a radiation system, a device manufacturing method and a radiation generating method

A conditioning system for conditioning a part of a lithographic apparatus, includes an evaporator positioned in thermal contact with the part for extracting heat from the part by evaporation of a fluid inside the evaporator; a condenser for removing heat from the fluid inside the condenser; fluid lines arranged between the evaporator and the condenser to form a fluid circuit; a pump arranged in the circuit to circulate the fluid in the circuit; an accumulator to hold fluid, wherein the accumulator is in fluid communication with the circuit and comprises a heat exchanger to transfer heat from or to fluid inside the accumulator; a temperature sensor to provide a signal representative of the fluid temperature; and a controller to maintain a substantially constant temperature of the fluid inside the circuit by regulating the amount of heat transferred by the heat exchanger based on the signal.

Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method

An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Radiation system and lithographic apparatus comprising the same

Growing community of inventors

Rosmalen, Netherlands

Olav Waldemar Vladimir Frijns