Nxp B.v.

Sciosense B.v.

Koninklijke Philips Corporation N.v.

Ams International Ag

Olaf Wunnicke

Willem Frederik Adrianus Besling

Casper Van Der Avoort

Klaus Reimann

Remco Henricus Wilhelmus Pijnenburg

Mareike K Klee

Peter G Steeneken

Martijn Goossens

Robert Frederick Milsom

Victor Zieren

Coenraad Cornelis Tak

Michael In 't Zandt

Peter Dirksen

Willem Franke Pasveer

Robert Hendrikus Margaretha Van Veldhoven

Rainer Kiewitt

Biju Kumar Sreedharan Nair

Ruediger Mauczok

Ronald Dekker

Jozef Thomas Martinus Van Beek

Kim Phan Le

Anco Heringa

Derk Reefman

Jan Willem Slotboom

Robert Van Veldhoven

Nico Maris Adriaan De Wild

Engel Johannes Knibbe

Roger Peter Anna Delnoij

Joerg Siegert

Wilhelm Georg Hermann

Uwe Mackens

Henri Marie Joseph Boots

Hendrik Bouman

Anderson Singulani

Hans Peter L&ouml;bl

Martinus Hermanus Wilhemus Maria Van Delden

Frederik Willem Maurits Vanhelmont

Friso Jedema

Hilco Suy

Jörg Siegert

Christina Adriana Renders

Stephan Heil

Reinout Woltjer

Jan Claes

Alessandro Faes

Hans Peter Loebl

Alberto Maccioni

Willem Besling

Hans Paul Tuinhout

Coen Tak

Vijayaraghavan Madakasira

Remco Alphonsus Hendrikus Breen

Dirk Van De Lagemaat

William Frederick Adrianus Besling

Lars Magnus Tarlé Borgstrom

Harry Van Esch

Marco De Wild

Chris Van Heesch

Peter Steeneken

Remco Henricus Pijnenburg

Cas Van Der Avoort

Willem Frederik Besling

Frederik Vanhelmont

A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Sensor package and method of producing the sensor package

A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

Attachment of stress sensitive integrated circuit dies

A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.

Sensor arrangement and method of operating a sensor arrangement

In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Capacitive sensors having temperature stable output

In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Semiconductor device and method for forming a semiconductor device

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge

The sensor package comprises a carrier () including electric conductors (), an ASIC device () and a sensor element (), which is integrated in the ASIC device (). A dummy die or interposer () is arranged between the carrier () and the ASIC device (). The dummy die or interposer () is fastened to the carrier (), and the ASIC device () is fastened to the dummy die or interposer ().

A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure.

MEMS capacitive pressure sensor

A governing circuit for a magneto-transistor is disclosed. The magneto-transistor comprising a first and second collector. At least one emitter and at least one base. The governing circuit is configured to measure a first calibration current at the first collector of the magneto-transistor and a second calibration current at the second collector of the magneto-transistor, while a calibration base-emitter voltage is applied to the magneto-transistor. The magneto-transistor is also configured to measure a first measurement current at the first collector of the magneto-transistor and a second measurement current at the second collector of the magneto-transistor, while a measurement base-emitter voltage is applied to the magneto-transistor, wherein the measurement base-emitter voltage is different form the calibration base-emitter voltage and determine an output signal indicative of an applied magnetic field using the measured first and second measurement current and first and second calibration currents.

Magnetic sensors

A differential magnetic field sensor system () is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system () comprises a first, a second and a third magnetic field sensor (), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion () provided as a surface portion on a, preferably SOI, wafer and having a surface (). On the surface () is arranged a central emitter structure () formed substantially mirror symmetrical with respect to a symmetry plane () that is substantially perpendicular to the surface (), and a first and a second collector structure (), each of which is arranged spaced apart from the emitter structure () and which are arranged on opposite sides of the symmetry plane () so as to be substantially mirror images of each other. The first magnetic field sensor () is operated double-sided in that its first collector structure () and its emitter structure () are externally connected via a first read-out circuitry and its second collector structure () and its emitter structure () are externally connected via a second read-out circuitry. The second magnetic field sensor () is operated single-sided in that its first collector structure () and its emitter structure () are externally connected via a third read-out circuitry. The third magnetic field sensor () is operated single-sided in that its second collector structure () and its emitter structure () are externally connected via a fourth read-out circuitry.

Differential lateral magnetic field sensor system with offset cancelling and implemented using silicon-on-insulator technology

The present invention relates to a transducer () comprising&#x2014;a membrane () configured to change shape in response to a force, the membrane () having a first major surface () and a second major surface (), &#x2014;a piezoelectric layer () formed over the first major surface () of the membrane (), the piezoelectric layer () having an active portion, &#x2014;first and second electrodes () in contact with the piezoelectric layer (), wherein an electric field between the first and second electrodes () determines the mechanical movement of the piezoelectric layer (), &#x2014;support structures () at the second major surface () of the membrane () on adjacent sides of the active portion of the piezoelectric layer (), at least part of the support structures () forming walls perpendicular, or at least not parallel, to the second major surface () of the membrane (), so as to form a trench () of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pressure at the support side than at the opposite side. The invention also relates to a method of forming such a transducer, and an array comprising at least one transducer of the like.

Thin film ultrasound transducer

A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Flow sensor

A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

MEMS capacitive pressure sensor, operating method and manufacturing method

Substrate material is oxidized around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidized substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.

Electric field gap device and manufacturing method

The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Growing community of inventors

Eindhoven, Netherlands

Olaf Wunnicke