Infineon Technologies Ag

Solarworld Innovations Gmbh

Infineon Technologies Dresden Gmbh & Co . Kg

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Qimonda Ag

Solarworld Industries Gmbh

Olaf Storbeck

Harald Hahn

Martin Kutzer

Holger Neuhaus

Hans-Joachim Schulze

Ralf Siemieniec

Albert Birner

Henning Feick

Helmut Brech

Hans-Juergen Thees

Rudolf Berger

Kerstin Kaemmer

Marc Probst

Anton Mauder

Francisco Javier Santos Rodriguez

Till Schloesser

Manfred Engelhardt

Peter Irsigler

Jens Peter Konrath

Michael Hutzler

Johannes Baumgartl

Ingo Muri

David Laforet

Michael Roesner

Oliver Hellmund

Matthias Kuenle

Stefan Krivec

Georg Ehrentraut

Joachim Hirschler

Ines Uhlig

Matthias Georgi

John Twynam

Thomas Bertrams

Matthias Schmeide

Haifeng Sun

Stefan Loesch

Tom Richter

Michael Stadtmüller

Markus Heinrici

Jens-Uwe Sachse

Andreas Krause

Mathias Plappert

Knut Stahrenberg

Claus Schneider

Maik Liebau

Lothar Pfitzner

Ingmar Neumann

Georg Duesberg

Henry Bernhardt

Wilhelm Kegel

Maik Langner

Christoffer Erbert

Christian Illemann

Georg Roters

Regina Hayn

Erwin Schoer

Ralph Trunk

Christian Koch

Matthias Schaarschmidt

Thomas Seidel

Guenther Aichmayr

Steffen Frigge

Stefan Hampl

Markus Neuber

Michael Wolf

Klaus Goeschl

Thilo Richter

Wolfgang Koell

Wolfgang Enger

Paul Grunow

Thomas Betzl

Stefan Kainz

A transistor device is provided. In an example, the transistor device includes a semiconductor body having a first main surface, a second main surface opposite to the first main surface. The transistor device further includes a transistor cell array including a plurality of transistor cells. The transistor cell array includes a first load electrode over the first main surface. The first load electrode is electrically connected to the plurality of transistor cells. The transistor cell array further includes a second load electrode over the second main surface. The second load electrode is electrically connected to the plurality of transistor cells. The plurality of transistor cells includes at least one control electrode including carbon.

Transistor device and method of manufacturing

A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.

Selective laser annealing method

A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.

Power semiconductor device having a control cell for controlling a load current

A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

Selective thermal annealing method

A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.

Method of processing a power semiconductor device

In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100&#xb0; C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.

Methods of forming a silicon-insulator layer and semiconductor device having the same

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

Apparatus and method for chemical vapor deposition process for semiconductor substrates

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

In various embodiments, a tabbing ribbon for connecting at least one solar cell is provided, wherein the tabbing ribbon at least partially extends in a non-planar manner and includes a non-planar section.

Tabbing ribbon and photovoltaic solar panel

In various embodiments, a single-pole switching unit for limiting the energy flow in a series circuit having photovoltaic modules by a pulsating control signal present on at least one DC line is provided. The switching unit may include: a switching element, which is designed to reduce the current flow in the at least one DC line of the photovoltaic modules; a transmission element, which is designed to couple out an electrical control signal present on the DC line and to control the switching element merely with the energy of the coupled-out control signal; and a coupling element, which is arranged in parallel with the switching element and which conducts the control signal through the switching unit when the switching element is nonconducting.

Single-pole switching unit for limiting the energy flow in a series circuit comprising photovoltaic modules, photovoltaic module arrangement and photovoltaic module

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Method for processing a carrier, a carrier, and a split gate field effect transistor structure

In various embodiments, a photovoltaic module may include: a plurality of photovoltaic cells, at least one photovoltaic cell of the number of photovoltaic cells comprising: a first plurality of contact wires on a front of the photovoltaic cell; and a second plurality of contact wires on a rear of the photovoltaic cell. The first plurality of contact wires and the second plurality of contact wires may be arranged offset with respect to one another.

Photovoltaic module, method for electrically connecting a plurality of photovoltaic cells, and device for electrically connecting a plurality of photovoltaic cells

A method for contacting and connecting solar cells, according to which at least one electrode is formed by at least one wire conductor, and including the following steps:

Method for contacting and connecting solar cells

An electrode for electrically connecting two photovoltaic cells is provided. Each photovoltaic cell may include a plurality of lamellar electrically conductive surface regions. The electrode may include a plurality of electrically conductive wires extending adjacent to one other; and a stabilizing structure coupled to the plurality of electrically conductive wires such that the space between the electrically conductive wires to one another is defined until the plurality of electrically conductive wires has been fixed on the plurality of lamellar electrically conductive surface regions of a photovoltaic cell.

Photovoltaic cell electrode and method for electrically connecting a photovoltaic cell

Growing community of inventors

Dresden, Germany

Olaf Storbeck