USA As Represented by Secretary of the Navy

Olaf M J Van't Erve

Berend T Jonker

Connie H Li

Kathleen M Mccreary

Jeremy T Robinson

Adam L Friedman

Keith E Whitener

Aubrey T Hanbicki

Shu-Fan Cheng

Enrique Cobas

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

Method for an optical modulator using the spin hall effect in metals

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material&#x2014;graphene.

Growing community of inventors

Falls Church, VA, United States of America

Olaf M J Van't Erve