USA As Represented by Secretary of the Navy

Olaf M J Van 't Erve

Berend T Jonker

Connie H Li

Jeremy T Robinson

Kathleen M Mccreary

Adam L Friedman

Ying Liu

Lian Li

Steven P Bennett

Cory D Cress

Keith E Whitener

Aubrey T Hanbicki

Joseph C Prestigiacomo

Shu-Fan Cheng

Enrique Cobas

Zachariah B Hennighausen

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

Pattern writing of magnetic order using ion irradiation of a magnetic phase transitional thin film

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on BiSe/WSat room temperature, comprising the steps of applying a laser to the BiSe/WS, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing BiSe/WSas a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the BiSe/WSheterostructure at room temperature.

Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Light-emitting devices having lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.

Multistate magnetic memory element using metamagnetic materials

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of BiSeand a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

Optical modulator using the spin hall effect in metals

A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.

Method of making a magnetic field sensor

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material&#x2014;graphene.

Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications

A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of BiSeand applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of BiSeand a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Growing community of inventors

Falls Church, VA, United States of America

Olaf M J Van 't Erve