Infineon Technologies Ag

Infineon Technologies Aktientgesellschaft

Olaf Kuehn

Juergen Zimmer

Klemens Pruegl

Andreas Strasser

Ralf-Rainer Schledz

Norbert Thyssen

Alexander William Simpson

Peter Lahnor

Andreas Roemer

Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

XMR sensors with high shape anisotropy

A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.

Method of determining the endpoint of a planarization process

A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Method of planarizing substrates

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Dresden, Germany

Olaf Kuehn