Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Forschungsverbund Berlin E.v.

Olaf Brox

Hans Wenzel

Markus Weyers

Paul Crump

Götz Erbert

Goetz Erbert

Andre Maassdorf

Christoph M Schultz

Stefan Bauer

Frank Bugge

Andre Maaßdorf

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Diode laser and method for manufacturing a high-efficiency diode laser

A simple, tuned monolithic integrated component for the generation of optical microwaves in the frequency range of from 0.5 GHz to the THz range by means of an optical microwave source, embodied as a multi-section semiconductor laser, the sections of which are such as to be independently electrically controlled, with a single mode DFB laser, driven above the laser threshold and at least one monolithic integrated (external) cavity, having a passive phase control section and an active section.

Optical microwave source

Growing community of inventors

Berlin, Germany

Olaf Brox