North Carolina State University

Samsung Electronics Co., Ltd.

Samsung Electro-Mechanics Co., Ltd.

Gwangju Institute of Science and Technology

Ok-hyun Nam

Robert F Davis

Cheol-soo Sone

Tsvetanka Zheleva

Michael D Bremser

Won-Seok Lee

Kyoung-ho Ha

Joon-seop Kwak

June-o Song

Tae-yeon Seong

Shi-Yun Cho

Dong-seok Leem

Han-youl Ryu

Sung-nam Lee

Tae-Geun Kim

Yong-jo Park

Hyeong-soo Park

In-hwan Lee

A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.

Semiconductor laser diode array

Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

GaN-based III&#x2014;V group compound semiconductor device and p-type electrode for the same

A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate, masks that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers that are formed on the masks, respectively, and first and second electrode that are formed on the bottom surface of the substrate and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered.

Semiconductor laser diode and method for fabricating the same

A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Nitride semiconductor light emitting device

A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a first mask that includes a first array of openings therein and growing the underlying gallium nitride layer through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nitride semiconductor layer. The first overgrown layer is then masked with the second mask that includes a second array of openings therein. The second array of openings is laterally offset from the first array of openings. The first overgrown gallium nitride layer is then grown through the second array of openings and onto the second mask, to thereby form a second overgrown gallium nitride semiconductor layer. Microelectronic devices may then be formed in the second overgrown gallium nitride semiconductor layer.

Gallium nitride semiconductor structure including laterally offset patterned layers

A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Gallium nitride semiconductor structures including lateral gallium nitride layers

A method for growing a group-III nitride compound (including BN, AlN, GaN and InN) semiconductor film, to which much attention is currently paid in the field of optical semiconductors. If the internal pressure of a reactor increases, vertical growth becomes faster, and internal crystal defects are reduced while many fine pits are generated in view of outer appearance. If the internal pressure of a reactor decreases, vertical growth becomes slower and lateral growth becomes relatively faster, producing fewer pits in view of outer appearance, while internal crystal defects increase. Based on such experimental results, nitride crystals having many fine pits and fewer internal defects are first grown by a high pressure growth method and the fine pits relatively increased in number are then filled by a low pressure growth method, thereby attaining a high quality group-III nitride film.

Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition

A method of manufacturing a semiconductor substrate is provided. The method includes a first step of forming a rugged portion in a GaN substrate, and a second step of forming a GaN thin film on the GaN substrate at a lateral growth rate fast enough to cover the GaN thin film vertically grown with the GaN thin film laterally grown, so that the rugged portion is covered with the GaN thin film.

Method of manufacturing GaN semiconductor substrate

Gallium nitride semiconductor structures including a lateral gallium

Growing community of inventors

Seoul, South Korea

Ok-hyun Nam