Samsung Electronics Co., Ltd.

Ohsuk Kwon

Kitae Park

Moosung Kim

Seung-Hwan Shin

Sangyong Yoon

Kihwan Choi

Jae-Duk Yu

BoGeun Kim

Youngsun Song

Jaewoo Im

Tae-young Kim

Dongku Kang

Sang-Hyun Joo

Jaeyong Jeong

Won-Taeck Jung

Yongsung Cho

Dongkyo Shim

Ju Seok Lee

Jae-Woo Park

Hyunjun Yoon

Tae-hong Kwon

Tae-Min Park

HyeongJun Kim

Seung-Gum Kim

An operating method of a nonvolatile memory device includes receiving a read command from a memory controller; determining a read mode based on the received read command, controlling a precharge time and an offset of a precharge control signal according to the determination result, and precharging a sensing bit line among bit lines to a precharge voltage based on the controlled precharge control signal. The sensing bit line is a bit line being precharged according to the determined read mode among the bit lines.

Nonvolatile memory device and operating method thereof

An operating method of a nonvolatile memory device includes determining whether a memory block is a selected block, and when the memory block is not the selected block, determining whether the memory block shares a block word line with the selected block. The method further includes applying an unselected block word line voltage to word lines of the memory block when the memory block shares the block word line with the selected block, and floating the word lines of the memory block when the memory block does not share the block word line with the selected block.

Nonvolatile memory device, storage device having the same, operating method thereof

A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

Method of programming non-volatile memory device and non-volatile memory device using the same

A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

Nonvolatile memory devices and methods of programming nonvolatile memory devices

A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit connected with the memory cell array via a plurality of bit lines and configured to selectively pre-charge the plurality of bit lines, and control logic configured to control the page buffer circuit such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a first time at a read operation and such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a second time different from the first time at a verification read operation. The second time is determined on the basis of the number of selected bit lines of the plurality of bit lines at the verification read operation.

Nonvolatile memory device and method of improving a program efficiency thereof

A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.

Nonvolatile memory device, memory system comprising same, and method of operating same

A negative voltage generator includes a direct current voltage generator configured to generate a direct current voltage, a reference voltage generator configured to generate a reference voltage, an oscillator configured to generate an oscillation clock, a charge pump configured to generate a negative voltage in response to a pump clock, and a voltage detector. The voltage detector is configured to detect the negative voltage by comparing a division voltage, obtained by voltage dividing the direct current voltage, with the reference voltage, and to generate the pump clock corresponding to the detected negative voltage based on the oscillation clock.

Negative voltage generator, decoder, nonvolatile memory device and memory system using negative voltage

Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.

Nonvolatile data storage devices, program methods thereof, and memory systems including the same

A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

Flash memory device and wordline voltage generating method thereof

A method of reading a nonvolatile memory device comprises sensing data stored in memory cells adjacent to selected memory cells to identify adjacent aggressor cells, and performing separate precharge operations on bitlines connected to selected memory cells having adjacent aggressor cells and on bitlines connected to selected memory cells having adjacent non-aggressor cells.

Nonvolatile memory device and method of reading same

A method of programming a nonvolatile memory device according to the present invention includes precharging bit lines according to data loaded in page buffers; electrically connecting the precharged bit lines to channels corresponding to the bit lines, respectively, to charge the channels; and applying a word line voltage for a program after charging the channels. A channel voltage boosting of each of the channels is determined according to data loaded in adjacent page buffers.

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Seoul, South Korea

Ohsuk Kwon