Samsung Electronics Co., Ltd.

Ohseong Kwon

Wandon Kim

Minwoo Song

Kyuho Cho

Namgyu Cho

Jinkyu Jang

HyeokJun Son

Jin Yong Kim

Beom Seok Kim

Yong-Suk Tak

Junggil Yang

Jong Cheol Lee

Beomseok Kim

Jooho Jung

Jaewan Chang

Inhyun Song

A semiconductor device includes: a substrate including an active region extending in a first direction; a gate electrode extending in a second direction and intersecting the active region, the gate electrode including first electrode layer(s) and a second electrode layer; channel layers spaced apart from each other in a third direction and at least partially surrounded by the gate electrode; source/drain regions, with at least one source/drain region on each side of the gate electrode and electrically connected to the channel layers; and air gap regions in the second electrode layer between the channel layers and between a lowermost channel layer and the active region in the third direction. The first electrode layer(s) or the second electrode layer has a first thickness between adjacent ones of the channel layers in the third direction, and has a second thickness greater than the first thickness on side surfaces of the channel layers.

Display device including a sensing layer for sensing an external input device and method of drving the same

A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.

Semiconductor device including a gate structure

The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.

Semiconductor devices

A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.

Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby

Growing community of inventors

Hwaseong-si, South Korea

Ohseong Kwon