Lg Semicon Co., Ltd.

Oh Seok Han

Chang Jae Lee

Jun Seok Lee

A semiconductor memory cell has a semiconductor substrate, an active region disposed on the semiconductor substrate and having two impurity regions, a gate electrode disposed on the active region, a field region isolated from the active region on the semiconductor substrate and having a contract hole, a capacitor disposed over the active region and field region on the semiconductor substrate, and a buried region disposed under the field region and the bit line contacting the first impurity region through the contact hole.

Manufacturing process for a DRAM with a buried region

Methods of fabricating phase shift masks, which facilitate easy adjustment of the light transmissivity of a field region and the thickness of a phase shift mask, to thereby simplify the production process, and increase its reliability and performance. Embodiments may include the steps of providing a transparent substrate, forming a conductive light shielding layer on the transparent substrate, implanting oxygen ions into the conductive light shielding layer to form a semitransparent film, and selectively etching the semitransparent film to form a phase shift film.

Growing community of inventors

Seoul, South Korea

Oh Seok Han