Electronics and Telecommunications Research Institute

Korea Telecommunication Authority

Kepco Nuclear Fuel Co., Ltd.

Oh-joon Kwon

Soo-Min Lee

Byung-Ryul Ryum

Tae-Hyeon Han

Deok-Ho Cho

Jung-Hee Lee

Kyong-bo Eom

Joon-kyoo Park

Kyeong-lak Jeon

Jin-seon Kim

Joong-jin Kim

Tae-kwon Lee

Kyoung-hong Kim

Jong-sung Yoo

Young-ik Yoo

Yong-Hyun Lee

Provided are embodiments of a pressure-compensated load transfer device that includes a plate having a first shaft vertically installed on one side and a second shaft vertically installed on the other side to be coaxial with the first shaft. Also included is a first bellows having an opening in one side to surround the first shaft, with the other side thereof being fixed to the one side of the plate. Further included is a plurality of second bellows each having an opening in one end, with the other end thereof being attached to the other side of the plate. A housing is also included, and the housing includes a high-pressure working hole communicating with the opening of the first bellows and a high-pressure channel coplanar with the high-pressure working hole and communicating with the openings of the second bellows. The plate is back-and-forth movably received in the housing.

Pressure-compensated load transfer device

A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield. Silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.

Method of fabricating a semiconductor substrate

Disclosed is a fabrication of a hetero-junction bipolar transistor in which a base parasitic capacitance is fully reduced by using a metallic silicide as a base, comprising the steps of injecting an impurity in a silicon substrate to form a conductive buried collector region; growing a collector epitaxial layer on the buried collector region and forming a field oxide layer; selectively injecting an impurity into the collector epitaxial layer to form a collector sinker; sequentially forming a base layer and an first oxide layer thereon; patterning the first oxide layer to define an extrinsic base region; ion-implanting an impurity in the extrinsic base region using a patterned oxide layer as a mask and removing the patterned oxide layer; depositing a metallic silicide film thereon to form a base electrode thin film; forming a capping oxide layer of about 500 .ANG. thickness only on the base electrode thin film; forming an isolating oxide layer thereon and sequentially and selectively removing the isolating oxide layer, the capping oxide layer, the base electrode thin film and the base layer using a patterned photomask to form a pattern, the isolating oxide layer being provided to electrically isolate base and emitter; forming a side wall oxide layer at both side edges of the pattern; removing a portion of the isolating oxide layer to define an emitter region; forming a passivation layer thereon and selectively removing the passivation layer to form contact holes; and depositing a polysilicon layer doped with impurity ions in the contact holes to form electrodes.

Method for fabricating hetero-junction bipolar transistor having reduced

Growing community of inventors

Daejeon, South Korea

Oh-joon Kwon