Dongbu Hitek Co., Ltd.

Oh Jin Jung

Ki Jun Yun

Seong Hun Jeong

Han Choon Lee

Sang Wook Ryu

Jong Taek Hwang

Chung Kyung Jung

Sung Wook Joo

Jin Youn Cho

Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.

Semiconductor device and method for manufacturing the same

A capacitive device includes a first capacitor including a first wiring layer, a first dielectric film, a first conductive layer, a first insulating layer on the first capacitor, a second capacitor on the first insulating layer including a second conductive layer, a second dielectric film, and a third conductive layer, a second insulating layer on the second capacitor, a second wiring layer on the second insulating layer including first and second connection wires, a first via connecting the first wiring layer to the second conductive layer, a second via connecting the third conductive layer to the second wiring layer, a third via connecting the first connection wire to the first conductive layer, and a fourth via connecting the second connection wire to the first wiring layer.

Capacitive device and method for fabricating the same

A method of manufacturing a semiconductor device including at least one of the following steps: () Forming a plurality of lower electrodes over a substrate. () Forming a first stop film over the lower electrodes. () Forming a filling layer over the first stop film. () Forming a second stop film over the filling layer. () Forming a first interlayer insulating layer over the second stop film. () Forming a plurality of upper electrodes over the first interlayer insulating layer. () Forming a second interlayer insulating layer over the upper electrodes. () Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. () Forming a contact ball in the cavity.

A method for adhering semiconductor devices is provided. The method includes forming a first semiconductor device including a first metal pad, forming a second semiconductor device including a second metal pad, adhering the first semiconductor device to the second semiconductor device, the first metal pad electrically connecting the second metal pad, and forming a heat sink via in the second semiconductor device.

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Gyeonggi-do, South Korea

Oh Jin Jung