Samsung Electronics Co., Ltd.

Other

Lms Co., Ltd.

Oh-hyun Kwon

Taek-Yong Jang

Jung-Hyun Shin

Won-Taek Choi

Jeong-ho Park

Hyun-jin Cho

Jin-A Jeon

Myoung-kyoung Jeong

Dong-Hyung Seo

Seok-Ryul Yun

Kyoung-Seok Oh

Young-Soo Do

Joong-Hyun Shin

Soon-ae Kim

Yun-sung Shin

Heung-mo Yang

Myoung-Kyoung Jeong

Soon-Ae Kim

An electronic apparatus is described. The electronic apparatus includes an image capture unit, a first image processor, a second image processor, a display unit, and an image storage unit. The image capture unit generates an input image by a photoelectric conversion of incident light. The first image processor generates a display image from the input image and generates a first stored image from the first input image. The input image is divided into a first input image and a second input image. The second image processor generates a second stored image from the second input image. The display unit displays the display image. The image storage unit stores a combined stored image. The combined stored image is a combination of the first stored image and the second stored image.

Electronic apparatus, method for controlling the same, and computer readable recording medium

An optical element capable of increasing an angular field while improving luminance by condensing light, and a backlight unit and a liquid crystal display including the same. The optical element includes a light-transmitting base film; a plurality of diffusing cavities or convex diffusing structures formed in one surface of the base film to diffuse light entering the base film; and a light-condensing pattern formed in the surface of the base film where the diffusing cavities or convex diffusing structures are formed so as to condense incident light.

Optical element and backlight unit and liquid crystal display having the same

Disclosed are a structure of an intermediate wall of a three arch excavated tunnel, which effectively exhausts subterranean water from a peripheral ground, and a method for constructing the tunnel. The method comprising the steps of: (a) excavating an upper portion of a central tunnel; (b) excavating a lower portion of the central tunnel; (c) forming an intermediate walland grouting a gap formed in the intermediate wall; (d) excavating an upper portion of a left main tunnel; (e) excavating an upper portion of a right main tunnel; (f) excavating a lower portion of the left main tunnel; (g) excavating a lower portion of the right main tunnel; and (h) installing a drain boardand a waterproof layerand casting lining concretetherein so that the tunnel is easily drained through drain pipesand residual water pressure is eliminated.

Structure of intermediate wall of three arch excavated tunnel and method for constructing the same

In a method for forming an isolation region in a semiconductor device, after forming a first oxide film and a silicon film on a semiconductor substrate, an oxidation-blocking film is formed on the silicon film. Then, a high-temperature heat treatment process is performed in a nitrogenous atmosphere. The oxidation-blocking film is selectively etched to form an opening, and a thermal oxidation process is performed to form a thermal oxide film in the opening. A bird's beak between the oxidation-blocking film and the silicon film is suppressed because of the heat treatment in a nitrogenous atmosphere, so that stable isolation characteristics can be secured.

Isolation method of semiconductor device

A method of fabricating a multi-chamber type DRAM cell capacitor having high capacitance within a limited area. A first concave area (54) of the storage electrode (72) is formed by means of an oxide film (46) as a scarifying layer. An insulating spacer (58) is formed in the first concave area (54). Then, first and second conduction layers (48, 60) are formed on the substrate (26) and top portions of the conduction layers are removed consecutively, so as to form a capacitor having a plurality of concave areas.

Method of fabricating a capacitor for a dynamic random access memory cell

According to the present invention, the incomplete silicon exposure is prevented by the sufficient overetching after the formation of an etching-stop layer on an oxide layer for protecting a conductive layer from the damage of the protective oxide layer when the self-aligned contact window is formed. Therefore, the thickness of the protective oxide layer can be minimized, and the bend of the chip can be improved whereby the following process will be accomplished easily.

Fabrication method of contact window in semiconductor device

A method of manufacturing folded capacitors comprises the steps of: forming a first storage electrode and a first insulating layer; forming a first plate electrode and a second insulating layer thereon and forming a pad poly thereon; limiting the first plate electrode to a predetermined portion; leaving a spacer; forming a second storage electrode; and depositing a third insulating layer and a second plate electrode thereon. It is possible to manufacture a capacitor with a large capacitance and to simplify the manufacturing processes of the capacitor by using the conventional capacitor manufacturing processes. The folded capacitors with a larger capacitance per unit area can be obtained without making the insulating layer be thinned even if the plane area of the capacitor may be reduced remarkably according to a tendency to high integration density.

Method of manufacturing folded capacitors in semiconductor and folded

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Seoul, South Korea

Oh-hyun Kwon