Hyundai Electronics Industries Co. Ltd.

Hynix Semiconductor Inc.

Konica Minolta Opto, Inc.

Oh-Bong Kwon

Yasushi Hoshino

Susumu Yamaguchi

Kazuo Tansho

Ki-Nam Park

Suk-Joong Lee

Masafumi Mizukami

Hyun-Eun Kim

Gyu-Tae Hwang

Hyun-Joo Ahn

Kwon-Ho Cha

Image sensors and methods to construct and use image sensors are disclosed. In an example, an image sensor includes a pixel array, a data store to store data transmitted from the pixel array, an image signal processing unit to perform signal processing on the output of the data store to improve the performance of the image sensor, a defective pixel address storage unit to store an address of a defective pixel by using a fuse blowing technology, a controller for receiving address information of the defective pixels from the defective pixel address storage unit and controlling the operation of the image sensor, and a defective pixel compensation unit for receiving the address information of the defective pixels from the defective pixel address storage unit, substituting data of the defective pixels with data of normal pixels around the defective pixels, and providing the substituted data to the image signal processing unit.

Image sensor with defective pixel address storage

Disclosed is an apparatus for converting an analog image data into a digital image data in a CMOS image sensor including a pixel array having M (row line)&#xd7;N (column line) color pixels, wherein the color pixels include a first color pixel for sensing a first color, a second color pixel for sensing a second color and a third pixel for sensing a third color. The apparatus includes an analog reference voltage generating unit for generating different analog reference voltages according to the analog image data of the color pixels, wherein the different analog reference voltage has different value and different decline rate, a selecting unit, in response to a select control signal, for selecting one of the corresponding analog reference voltages according to the color pixels, and a comparing unit for comparing the analog reference voltage and the analog image data to generate the digital image data corresponding to the color pixels, whereby a conversion operation of the analog image data into the digital image data is differently carried out according to the color characteristic.

Apparatus for converting analog image data into digital image data in CMOS image sensor

A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.

Method for reducing dark current in image sensor

A CMOS image sensor comprising: a light receiving unit as a photoelectric conversion portion; a signal processing circuit unit; a first color filter layer array and a first microlens array layer, which are provided on an upper surface of the light receiving portion; and a second layer comprising at least one of a color filter layer and a microlens array layer, provided on a region of at least a portion of an upper surface of the signal processing circuit portion.

CMOS image sensor

An image sensor and a method for driving a pixel array in the image sensor are to prevent unnecessary power consumption by controlling transistors contained in a unit pixel. The unit pixel contains a transfer transistor, a reset transistor, a drive transistor and a select transistor. Under a correlated double sampling, within a predetermined period after the reset transistor is turned off, the select transistor is turned on to output a reset voltage level transferred from a voltage source as a unit pixel output signal through the drive transistor. As a result, the voltage source is not directly coupled to an output of the unit pixel to thereby effectively reduce unwanted power consumption and enhance the resulted picture quality.

Image sensor and method for driving the same

This invention relates to a current cell playing a role as a current switch source in a digital-to-analog converter. According to the present invention, the current cell assembled by both p-type MOS transistor M1 for current supply and p-type MOS transistor M2 and M3 for symmetrical operation, comprises: an inverting means consisting of p-type and n-type MOS transistor M5 and M4, where the digital input signal Di is applied to each of gate terminal and where the source terminal is connected to power supply terminal Vdd and ground terminal GND; a transmission means consisting of n-type MOS transistor M7, where the digital input signal of Di is applied to its gate terminal and power supply voltage Vdd is applied to its source terminal, and p-type and n-type MOS transistors M6 and M8, where the digital input signal Di and the output signal of the said inverting means is applied to each of their gate terminal, respectively. The output signal from the said inverting and transmission means is applied to the gate terminals of the said p-type MOS transistors M2, M3 respectively. The features of the current cell is apparent in that the signal symmetrical to MOS transistors M2 and M3 can reach the input side of digital signal determining on or off state at nearly the same time through additional circuits, thus taking advantage of the differential type which has better symmetrical operation, and thus making its design easier. Therefore, a high-speed D/A converter can be made available and can also be used in a system contain such converter.

Growing community of inventors

Ichon-shi, South Korea

Oh-Bong Kwon