Seoul National University

Ogyun Seok

Woojin Ahn

Min-Koo Han

A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfOlayer the protecting layer through RF sputtering.

Growing community of inventors

Seoul, South Korea

Ogyun Seok