Semes Co., Ltd.

Ogsen Galstyan

Jong-Hwan An

Jong Hwan An

Junghwan Lee

Jae Hyun Cho

Won Seok Lee

Shin-Woo Nam

Hyeon Gyu Kim

Hyoungkyu Son

Young-Bin Kim

Sung Je Kim

Min Keun Bae

Dong Suk Kim

Goon Ho Park

Hyo Seong Seong

Jamyung Gu

Harutyun Melikyan

Byeung Geon Jeon

Hyun-Jin Kim

Junpyo Lee

Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.

Support unit and apparatus for treating substrate

The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

Substrate treating apparatus and substrate support unit

A substrate treating apparatus is disclosed. The substrate treating apparatus may include a chamber having a treating space defined therein, a support unit for supporting the substrate in the treating space, a heater power source for applying electric power to a heater in the support unit, a high-frequency power source for applying high-frequency power to a lower electrode in the support unit, and a filter unit installed at a line for connecting the heater power source with the heater to prevent high-frequency inflow. The filter unit may include a housing, one or more coils in the housing, and an adjustment member disposed between the housing and the coil. The adjustment member may be made of a non-magnetic material. The adjustment member may be spaced from the coil at a predefined spacing, and spaced apart from an inner wall of the housing or in contact with the housing inner wall.

Filter unit, substrate treating apparatus including the same, and substrate treating method

Disclosed is a substrate treating apparatus, which includes a chamber having a space for treating a substrate in an interior thereof, a substrate support assembly including a support plate situated in the chamber and which supports the substrate, a gas supply unit which supplies a gas into the interior of the chamber, a plasma generating unit which excites the gas in in the interior of the chamber into a plasma state, and a substrate temperature control unit which controls a temperature of the substrate, and the substrate temperature control unit includes a plurality of heaters installed in different areas of the support plate, a power supply part which supplies electric power to the plurality of heaters, a ferrite core which interrupts a low-frequency signal introduced to the power supply part, and a plurality of air cores which interrupts a high-frequency signal introduced into the power supply part.

Substrate treating apparatus and method for controlling temperature of ferrite core

Disclosed are a plasma generating unit and a substrate treating apparatus including the same. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a substrate support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a process gas into the treatment space, and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit includes an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas, and a magnetic structure including magnetic walls disposed between the plurality of antenna coils, and wherein the antenna unit includes a first antenna coil having a ring shape, and a second antenna coil disposed outside the first antenna coil and having a ring shape.

Plasma generating unit and substrate treating apparatus comprising the same

A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.

Plasma generation apparatus, substrate treating apparatus including the same, and control method for the plasma generation apparatus

Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.

Apparatus for supplying power and apparatus for treating substrate including the same

Growing community of inventors

Cheonan-si, South Korea

Ogsen Galstyan