Volterra Semiconductor Corporation

Ognjen Djekic

Alexandr Ikriannikov

Ion E Opris

David B Lidsky

Anthony J Stratakos

Budong You

Trey Roessig

Biljana Beronja

Bradley J Suppanz

Alexander Ikriannikov

Disclosed are systems, devices, circuits, components, mechanisms, and processes in which a switching mechanism can be coupled between components. The switching mechanism is configured to have an on state or an off state, where the on state allows current to pass along a current path. A monitoring mechanism has one or more sensing inputs coupled to sense an electrical characteristic at the current path. The electrical characteristic can be a current, voltage, and/or power by way of example. The monitoring mechanism is configured to output a reporting signal indicating the sensed electrical characteristic. The monitoring mechanism can be integrated with the switching mechanism on a chip.

Integrated protection devices with monitoring of electrical characteristics

A multiple-output DC-DC converter has a first and a second DC-DC sub-converter, each DC-DC subconverter may be a buck, boost, or buck-boost converter having a primary energy-storage inductor. Each DC-DC subconverter drives a separate output of the multiple-output converter and typically has a separate feedback control circuit for controlling output voltage and/or current. The converter has a common timing circuit to maintain a phase offset between the first and DC-DC subconverters. The primary energy storage inductors of the first and second DC-DC converter are magnetically coupled to raise an effective ripple frequency of the converter and simplify output filtering.

Multistage and multiple-output DC-DC converters having coupled inductors

Single phase inductors have non-linear inductance values, and M-phase coupled inductors having non-linear leakage inductance values. Each inductor includes, for example, at least one of the following: a saturable magnetic element, a gap of non-uniform thickness, a core formed of a distributed gap material, or a non-homogeneous core. A DC-to-DC converter includes an inductor having a non-linear inductance value, a switching subsystem, and an output filer. Another DC-to-DC converter includes an output filter, a coupled inductor having non-linear leakage inductance values, and switching subsystems.

Voltage converter inductor having a nonlinear inductance value

Disclosed are devices, apparatus, circuitry, components, mechanisms, modules, systems, and processes for controlling a voltage regulator in response to information from a load. In some implementations, transient minimizer circuitry is coupled to receive a notification signal indicating a change or an anticipated change in an electrical characteristic of the load. The transient minimizer circuitry is configured to generate a state command signal responsive to the notification signal. The state command signal indicates a state of the voltage regulator. The switching control circuitry is coupled to receive the state command signal from the transient minimizer circuitry. The switching control circuitry is configured to operate switch circuitry to control the state of the voltage regulator in accordance with the state command signal.

Voltage regulator control using information from a load

A magnetic device includes a magnetic core and N windings wound at least partially around respective portions of the magnetic core. Each of the N windings has opposing first and second ends. Each first end forms a first connector, and each second end forms a second connector. Each first connector is adapted for coupling to a first substrate in a first plane, and each second connector is adapted for coupling to a second substrate in a second plane, where the second plane is different from the first plane. N is an integer greater than zero. An electrical assembly includes a substrate and a power supply module including a magnetic device. The magnetic device at least partially electrically couples the power supply module to the substrate.

Pin inductors and associated systems and methods

An asymmetrical coupled inductor includes a first and a second winding and a core. The core is formed of a magnetic material and magnetically couples together the windings. The core is configured such that a leakage inductance value of the first winding is greater than a leakage inductance value of the second winding. The coupled inductor is included, for example, in a multi-phase DC-to-DC converter. A DC-to-DC converter including a symmetrical coupled inductor includes at least one additional inductor electrically coupled in series with one or more of the coupled inductor's windings. A controller for a DC-to-DC converter including a first phase having an effective inductance value greater than an effective inductance value of a second phase is configured to shut down the second phase while the first phase remains operational during a light load operating condition.

Asymmetrical coupled inductors and associated methods

A multiphase DC-to-DC power converter has two or more sets of input switches, each set of input switches driving primary windings of at least one associated transformer. Each transformer has one or two secondary windings, the secondary windings feeding power through output switches or rectifiers through an associated output inductor into a common filter. At least two of the output inductors are magnetically coupled.

Apparatus for isolated switching power supply with coupled output inductors

A multiphase DC-to-DC power converter has two or more sets of input switches, each set of input switches driving primary windings of an associated transformer. Each transformer has one or two secondary windings, the secondary windings feeding power through output switches or rectifiers through an associated output inductor into a common filter. At least two of the output inductors are magnetically coupled.

A semiconductor package has a printed circuit board, an integrated circuit chip on the printed circuit board with an exposed semiconductor die, and a rigid structure secured to the printed circuit board and enclosing the exposed semiconductor die. The exposed surface of the semiconductor die placed is in thermal contact with an inner surface of the rigid structure with a compressible material.

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Fremont, CA, United States of America

Ognjen Djekic