Fujifilm Electronic Materials U.s.a., Inc.

Arch Specialty Chemicals, Inc.

Ognian N Dimov

Sanjay Malik

Binod B De

Raj Sakamuri

William A Reinerth

Ahmad A Naiini

Stephanie J Dilocker

Andrew J Blakeney

Lawrence Ferreira

Gregory Domenic Spaziano

J Thomas Kocab

John P Hatfield

Michaela Connell

This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

Polyimides

This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.

Photosensitive polyimide compositions

This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.

This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Planarizing process and composition

This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.

Photosensitive stacked structure

A polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

This disclosure relates to dielectric film forming compositions containing a) at least one fully imidized polyimide polymer; b) at least one metal-containing (meth)acrylates; c) at least one catalyst; and d) at least one solvent, as well as related processes and related products. The compositions can form a dielectric film that generates substantially no debris when the dielectric film is patterned by laser ablation process.

Dielectric film forming composition

A polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (I) (b) at least one tetracarboxylic acid dianhydride, and optionally (c) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of an unsubstituted alkenyl group and an unsubstituted alkynyl group. Each variable in the above formula is defined in the specification.

This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib),  

Polyimide compositions

This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent; (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

Cleaning composition

This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01&#x3bc;/min in a developer at 25&#xb0; C., and the second layer has a dissolution rate of greater than about 0.01&#x3bc;/min in the developer at 25&#xb0; C.

Stripping process

A photoresist composition. The composition has the following: (a) one or more resin binders that include one or more acid sensitive groups and that are substantially free of phenolic groups protected by acetal or ketal groups; (b) one or more photo acid generators, that, upon exposure to a source of high energy, decompose and generate a photoacid strong enough to remove the one or more acid sensitive groups; (c) one or more ionic non-photosensitive additives including an iminium salt; and (d) one or more solvents. There is also a process for patterning relief structures on a substrate employing the photoresist composition.

Chemically amplified positive photoresist composition

An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: 

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Warwick, RI, United States of America

Ognian N Dimov