Hughes Aircraft Company

Hughes-jvc Technology Corporation

Ogden J Marsh

Steven E Shields

Ronald L Williams

A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon semiconductor layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer (30). The exposed outer surface (28a) of the layer (28) is uniformly thinned to approximately 4 micrometers. Vertical interconnects or vias (49) are formed through the layer (28), and microelectronic transistor driver devices (42) and storage capacitors (47) are formed on the outer surface (28a) of the layer (28) in connection with the respective vias (49). A substrate (12) is adhered to the outer surface (28a) of the layer (28), and the carrier (52) is removed. Reflective metal back electrodes (20) are formed on the insulating layer (30) in connection with the respective vias (49). A transparent front plate (14) having a transparent front electrode (16) formed thereon is adhered to the insulating layer ( 30) such that a sealed space (24) is defined between the electrodes (16,20) which is filled with liquid crystal material (26). Large scale integrated driver circuitry (38,40) is fabricated in the peripheral portion (28c) of the layer (28) laterally external of the plate (14) and is externally interconnected by via holes (28d,28e) and wirebonds (44,45).

Relective liquid crystal display including driver devices integrally

A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer. The exposed inner surface (28a) of the monocrystalline layer (28) is uniformly thinned to approximately 4 micrometers. Front electrodes (20) in the form of heavily doped areas, and microelectronic transistor driver devices (42) for the electrodes (20) are integrally formed on the outer surface (28a) of the monocrystalline layer (28). A front plate (12) is bonded to the outer surface (28a) of the monocrystalline layer (28), and the carrier (52) is removed. The central portion of the etch stop layer (30) is removed from the inner surface (28b) of the monocrystalline layer (28), and the exposed central portion (28c) of the layer (28) is uniformly thinned to approximately 400 angstroms using plasma assisted chemical etching. A back plate (14 ) having a back electrode (16) formed thereon is adhered to the unetched peripheral portion (28d) of the inner surface (28b) of the monocrystalline layer (28) to define a sealed space (24) between the front and back electrodes (12,14) which is filled with liquid crystal material (26). Large scale integrated driver circuitry (38,40) is fabricated in the peripheral portion (28d) of the layer (28) laterally external of the back plate (14) and externally interconnected by via holes (28g,28h) and wirebonds (44,45).

Liquid crystal display including electrodes and driver devices

A photosensitive layer of a liquid crystal light valve is made of a single crystal silicon wafer (14,70) bearing an irregular pattern of diodes (50a,50b, 60a,60b). The diodes are varied in size, shape and location so as to improve resolution, reduce interaction between the diode spatial pattern and the spatial pattern of input data, and, in one embodiment, to eliminate a difficult masking step. A masking step is eliminated by co-depositing a metal vapor and a silicon dioxide vapor to form random islands of cermets (50a,50b), each comprising an island of metal surrounded by a body of silicon dioxide. In other embodiments a pseudo-random mask is employed having an irregular pattern of holes (76) of varied sizes and locations. The mask is employed to photolithographically form an irregular pattern of holes in a silicon dioxide layer (72) laid down over the single crystal silicon (70) and a layer of metal (78) is deposited to provide areas of metal within the irregular pattern of holes in contact with the single crystal silicon layer. Alternatively, the mask with irregular holes may be employed to control areas in which an N-type ion dopant is implanted in a P-type silicon crystal.

Growing community of inventors

Carlsbad, CA, United States of America

Ogden J Marsh