Carl Zeiss Sms Ltd.

Carl Zeiss Smt Gmbh

Ofir Sharoni

Vladimir Dmitriev

Guy Ben-Zvi

Dirk Beyer

Erez Graitzer

Nadav Wertsman

Igor Varvaruk

Eitan Zait

Steven Labovitz

Eran Chason

Vladimir J Dmitriev

The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Method and apparatus for correcting errors on a wafer processed by a photolithographic mask

A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.

Analyses of measurement data

A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission () across the photo mask () can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask () can be determined () based on the transmittance variation distribution of the photo mask.

Critical dimension uniformity correction by scanner signature control

Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension.

Global landmark method for critical dimension uniformity reconstruction

Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.

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Karkur, Israel

Ofir Sharoni