Lucent Technologies Inc.

University Technology Corporation

Genus, Inc.

Ofer Sneh

Mindaugas Fernand Dautartas

John Burnette MacChesney

Steven McClellan George

Jason W Klaus

Eliezer M Rabinovich

Henry Miles O'Bryan

William James Minford

Aza E Mishkevich

A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Radical-assisted sequential CVD

A portable purge system for transporting materials, such as semiconductor wafers used in the manufacture of ICs, comprises a carrier having compartments for releasably receiving and enclosing the materials therein. The carrier is flooded with an inert gas such as nitrogen so as to adsorb the nitrogen on the surface of the materials, dilute contaminants, and purge the contaminants from the carrier. The carrier and the flooding means are mounted in a transport case. A humidifier is connected to the flooding means so that the materials will adsorb water and thereby further resist adsorption of hydrocarbon contaminants.

Portable purge system for transporting materials

The present invention provides a method for growing atomic layer thin films on functionalized substrates at room temperature using catalyzed binary reaction sequence chemistry. Specifically, the atomic layer films are grown using two half-reactions. Catalysts are used to activate surface species in both half-reactions thereby enabling both half-reactions to be carried out at room temperature.

Method of growing films on substrates at room temperatures using

The invention is a method of fabricating a device which includes the step of etching a layer of tantalum oxide or niobium oxide. A material comprising chlorine and a material comprising oxygen are applied to the layer and energy is added to the layer in the form of heat or ion bombardment.

Method for etching tantalum oxide

The specification describes sputtering processes for the deposition of silicon dioxide films doped with high levels of oxides or other materials to alter the optical and/or electrical characteristics of the films. Sol gel methods are used to prepare composite sputtering targets of ultra fine mixtures of materials so the composition of the sputtered films replicate the composition of the target.

Deposition of highly doped silicon dioxide films

Embodiments of the invention include an apparatus and method for stabilizing the operation of lithium niobate devices such as modulators due to charge accumulation caused by, e.g., pyroelectric and piezoelectride effects. The apparatus comprises a substrate having a waveguide formed therein, a buffer layer formed on the substrate, a Si.sub.2 Ti.sub.x N.sub.8/3+x charge dissipation layer (CDL) formed on the buffer layer and a set of electrodes formed on the charge dissipation layer. According to embodiments of the invention, the Si.sub.2 Ti.sub.x N.sub.8/3+x charge dissipation layer has a resistivity of approximately 15-150 k.OMEGA.cm. Alternatively, the apparatus includes a second charge dissipation layer formed on the opposing surface of the substrate. The charge dissipation layer according to embodiments of the invention is advantageous in that it provides a suitable resistivity and is a composition that is easily reproducible using conventional formation techniques such as sputtering.

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Branchburg, NJ, United States of America

Ofer Sneh