Sundew Technologies, LLC

Genus, Inc.

Other

Ofer Sneh

Carl J Galewski

Thomas E Seidel

Jereld Lee Winkler

Anat Sneh

Lee E Vestman

Steven F Ruhnke

Face-sealed fittings are described for joining flanged tubes. These fittings utilize unique designs for pairing rings, nipples, and nuts to provide several advantages over prior art designs. Face-sealed fittings provided herein are symmetrical and genderless, and are field attachable/removable over previously welded glands. Moreover, they are torque free and have footprints comparable or smaller than legacy assemblies.

Face sealed fittings

An apparatus is described for controlling a flow of a fluid therethrough while the apparatus is connected to a source of control fluid. The apparatus includes an input, a valve seat, a diaphragm, an output, and a diaphragm control space. The diaphragm control space is partially defined by the diaphragm, and includes a control fluid inlet and a control fluid outlet. The apparatus is operative to independently control a flow of control fluid into the diaphragm control space through the control fluid inlet and a flow of control fluid out of the diaphragm control space through the control fluid outlet. A deflection of the diaphragm in relation to the valve seat is responsive to a pressure of the control fluid in the diaphragm control space. The deflection of the diaphragm in relation to the valve seat is operative to control a fluidic flow resistance between the input and the output.

Fluid-actuated flow control valves

An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.

Apparatus and methods for safely providing hazardous reactants

A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.

Deposition method and apparatus

Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.

Capacitors with high energy storage density and low ESR

A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360&#xb0; substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.

Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems

Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.

Fail safe pneumatically actuated valve with fast time response and adjustable conductance

An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.

ALD apparatus and method

Fail-safe pneumatically actuated valve with fast time response and adjustable conductance

A seal-protected perimeter partition valve apparatus () defines a vacuum and pressure sealed space () within a larger space () confining a substrate processing chamber with optimized geometry, minimized footprint and 360&#xb0; substrate accessibility. A compact perimeter partitioned assembly () with seal protected perimeter partition valve () and internally contained substrate placement member () further provides processing system modularity and substantially minimized system footprint.

Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (&#x2033;) and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source () within a source space comprising: sensing the accumulation of the chemical on a sensing surface (); and controlling the temperature of the chemical source depending on said sensed accumulation.

A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.

Growing community of inventors

Boulder, CO, United States of America

Ofer Sneh