Evonik Degussa Gmbh

Evonik Operations Gmbh

Technische Universitat Graz

Odo Wunnicke

Matthias Patz

Stephan Traut

Joachim Erz

Christoph Mader

Michael Holthausen

Emmanouil Spyrou

Helmut Mack

Sylvia Monsheimer

Stephan Wieber

Patrik Stenner

Benjamin Willy

Elke Gollan

Frank Heindl

Marie-Theres Wilkes

Harald Stüger

Harald Stueger

Michael Haas

Michael Coelle

Peter Altenbuchner

Christiane Zatocil

Janette Klatt

Bodo Frings

Maximilian Cornelius

Jasmin Lehmkuhl

Miriam Deborah Malsch

Paul Henrich Woebkenberg

Christian Guenther

Thomas Große-Puppendahl

Maik Dimmerling

Kim Bühning

Thomas Pastor

David Bléger

Dominik Mispelkamp

Vanessa Vennemann

Tim Hupfeld

Susanne Leuchs

Thomas Lainer

Stephan Herrmann

Susanne Christine Martens

Maximilian Roccaro

Anna Pougin

Daniel Schmitt

Jörg Zöllner

Christian Däschlein

Paul Henrich WÖBKENBERG

Michael CÖLLE

The present invention relates to an additive manufacturing process using a composition comprising the reaction product of a polyester polyol and a compound comprising at least one functional group that can react with a hydroxyl-group of the polyester polyol and at least one further functional group, selected from acrylate-or methacrylate-group, wherein the polyester polyol is based on at least one organic acid comprising at least two carboxyl groups or its anhydride and at least one polyol comprising at least two hydroxy-groups, wherein the reaction product has a glass transition temperature Tg of below 23° C., wherein the composition optionally further comprises a photoinitiator, as a photopolymerizable material in.

Composition comprising polyesters for additive manufacturing

Methods can be used for producing three-dimensional objects by powder bed fusion, using inks containing superparamagnetic particles and solvents. Sintering is performed by a magnetic field having a frequency of 50 kHz to 5 GHz.

Selective superparamagnetic sintering and an ink suitable therefor

A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula RAlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula ClSiSi(SiH), (ClSi)Si(SiH)or HSi(SiH)SiCl.

Partially hydrogenated chlorosilanes and methods for preparing same by selective hydrogenation

The present invention relates to compositions comprising at least one hydridosilane of the generic formula SiHwith n&#x2265;5 and m=(2n) and (2n+2) and at least one compound of the formula HB (OR)with R=C-C-alkyl, C-C-aryl, C-C-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Doped hydridosilane compositions, and method for producing same

The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

Method for producing differently doped semiconductors

The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Process for producing structured coatings

Growing community of inventors

Muenster, Germany

Odo Wunnicke