Siemens Aktiengesellschaft

Atmel Germany Gmbh

Odile Dequiedt

Martin Schrems

Klaus-Dieter Morhard

Kai Wurster

J&uuml;rgen Faul

Alexandra Lamprecht

Wolfram Kluge

An operational amplifier and use of an operational amplifier is provided that includes an input differential amplifier, which is connected to a first input and to a second input and a differential output stage, which is connected to the input differential amplifier and a first output and a second output. The differential output stage has a first branch with two first transistors, whose drain and/or collector are connected to one another and to the first output. The differential output stage has a second branch with two second transistors, whose drain and/or collector are connected to one another and to the second output. The first gates and/or the first bases of the two first transistors in the first branch are connected to one another and to a first output of the input differential amplifier. The second gates and/or the second bases of the two second transistors in the second branch are connected to one another and to a second output of the input differential amplifier. The differential output stage has a constant current source, which is connected to each branch to supply a current through the branches.

Operational amplifier

A trench capacitor, in particular for use in a semiconductor memory cell, has a trench formed in a substrate; an insulation collar formed in an upper region of the trench; an optional buried plate in the substrate region serving as a first capacitor plate; a dielectric layer lining the lower region of the trench and the insulation collar as a capacitor dielectric; a conductive second filling material filled into the trench as a second capacitor plate; and a buried contact underneath the surface of the substrate. The substrate has, underneath its surface in the region of the buried contact, a doped region introduced by implantation, plasma doping and/or vapor phase deposition. A tunnel layer, in particular an oxide, nitride or oxinitride layer, is preferably formed at the interface of the buried contact. A method for producing a trench capacitor is also provided.

Trench capacitor with an insulation collar and method for producing a trench capacitor

A trench capacitor, in particular for use in a semiconductor memory cell, has a trench formed in a substrate; an insulation collar formed in an upper region of the trench; an optional buried plate in the substrate region serving as a first capacitor plate; a dielectric layer lining the lower region of the trench and the insulation collar as a capacitor dielectric; a conductive second filling material filled into the trench as a second capacitor plate; and a buried contact underneath the surface of the substrate. The substrate has, underneath its surface in the region of the buried contact, a doped region introduced by implantation, plasma doping and/or vapor phase deposition. A tunnel layer, in particular an oxide, nitride or oxinitride layer, is preferably formed at the interface of the buried contact.

Trench capacitor with insulation collar and method for producing the trench capacitor

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Dresden, Germany

Odile Dequiedt