Utica Leaseco, LLC

Octavi Santiago Escala Semonin

Reto Adrian Furler

Hasti Majidi

Brendan M Kayes

Daniel Guilford Patterson

Vladimir N Faifer

Andrew James Ritenour

Jan Moritz Limpinsel

Edwin J Rodriguez

Abraham Saldivar-Valdes

Kristen Sydney Hessler

Kirsten Sydney Hessler

A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.

Sputtered then evaporated back metal process for increased throughput

This disclosure describes an elastic multi-contact probe that includes conductive strips each of which comprises a conductive elastomer; dielectric strips formed on a back surface of a respective conductive strip; and a layer of a thermoplastic formed on back surfaces of the dielectric strips. The disclosure also describes a method that includes measuring a first I-V curve between a pair of inner probes of the an elastic multi-contact probe based on a first current applied to a pair of outer probes; determining a first slope of a linear region of the first I-V curve; measuring a second I-V curve between the pair of inner probes based on a second current applied to the pair of inner probes; determining a second slope of a linear region of the second I-V curve; and calculating a sheet resistance and a contact resistivity of the semiconductor material based on the first and second slopes.

Systems and methods for measuring electrical characteristics of a material using a non-destructive multi-point probe

A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.

Laser-textured thin-film semiconductors by melting and ablation

A photovoltaic device and a method of forming a contact stack of the photovoltaic device are disclosed. The photovoltaic device may include a first layer deposited on a semiconductor layer including a compound semiconductor material. The photovoltaic device may also include a dopant layer comprising tin (Sn) deposited on the first layer. The photovoltaic device may further include a conductive layer deposited or provided over the dopant layer to form a contact stack with the first layer and the dopant layer.

Front metal contact stack

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San Francisco, CA, United States of America

Octavi Santiago Escala Semonin