Infineon Technologies Ag

Oana Julia Spulber

Hans-Joachim Schulze

Roman Baburske

Markus Bina

Anton Mauder

Andreas Peter Meiser

Roland Rupp

Franz-Josef Niedernostheide

Christian Philipp Sandow

Wolfgang Roesner

Stephan Voss

Moriz Jelinek

Matthias Kuenle

Daniel Schloegl

Christian Krueger

Christoph Weiss

Benedikt Stoib

Thomas Waechtler

Bernd Bitnar

A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

Semiconductor device including a field stop region

A method of manufacturing a device in a semiconductor body includes forming a first field stop zone portion of a first conductivity type and a drift zone of the first conductivity type on the first field stop zone portion. An average doping concentration of the drift zone is smaller than 80% of that of the first field stop zone portion. The semiconductor body is processed at a first surface and thinned by removing material from a second surface. A second field stop zone portion of the first conductivity type is formed by implanting protons at one or more energies through the second surface. A deepest end-of-range peak of the protons is set in the first field stop zone portion at a vertical distance to a transition between the drift zone and first field stop zone portion in a range from 3 &#x3bc;m to 60 &#x3bc;m. The semiconductor body is annealed.

Method of manufacturing a semiconductor device comprising first and second field stop zone portions

An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 10cmalong a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.

Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method

A semiconductor device includes trench gate structures that extend from a first surface into a silicon carbide portion. A shielding region between a drift zone and the trench gate structures along a vertical direction orthogonal to the first surface forms an auxiliary pn junction with the drift zone. Channel regions and the trench gate structures are successively arranged along a first horizontal direction. The channel regions are arranged between a source region and a current spread region along a second horizontal direction orthogonal to the first horizontal direction. Portions of mesa sections between neighboring trench gate structures fully deplete at a gate voltage within an absolute maximum rating of the semiconductor device.

Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. The semiconductor body further comprises: a barrier region and a drift volume having at least a first drift region wherein the barrier region couples the first drift region with the semiconductor channel region.

N-channel bipolar power semiconductor device with P-layer in the drift volume

N-channel bipolar power semiconductor device with p-layer in the drift volume

n-channel bipolar power semiconductor device with p-layer in the drift volume

Growing community of inventors

Neubiberg, Germany

Oana Julia Spulber