Wake Forest University

University of Utah Research Foundation

Oana Diana Jurchescu

Peter James Diemer

Chuang Zhang

Zeev Valentine Vardeny

J Daniel Bourland

Yaochuan Mei

Andrew Zeidell

Tong Ren

In one aspect, radiation dosimeters are described herein comprising organic field effect transistors. Briefly, a radiation dosimeter comprises an organic field effect transistor having composition and/or electronic structure exhibiting a shift in threshold voltage as a function of radiation dose.

Radiation dosimeters and applications thereof

Organic semiconductor compositions (OSCs) compatible with laser printing techniques are described herein. In being compatible with laser printing techniques, the OSCs are in particulate form and generally comprise an organic semiconductor component and carrier. The organic semiconductor component can comprise any small molecule semiconductor or polymeric semiconductor not inconsistent with the laser printing methods.

Laser printable organic semiconductor compositions and applications thereof

In one aspect, field effect transistors are described herein employing channels formed of hybrid halide perovskite materials. For example, a field effect transistor comprises a source terminal, a drain terminal and a gate terminal wherein a dielectric layer is positioned between the gate terminal and the source and drain terminals. A channel layer is in electrical communication with the source terminal and the drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer.

Hybrid halide perovskite-based field effect transistors

In one aspect, organic thin film transistors are described herein. In some embodiments, an organic thin film transistor comprises a source terminal, a drain terminal and a gate terminal; a dielectric layer positioned between the gate terminal and the source and drain terminals; and a vibrationally-assisted drop-cast organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal, wherein the transistor has a carrier mobility (&#x3bc;) of at least about 1 cm/V&#xb7;s.

Growing community of inventors

Winston-Salem, NC, United States of America

Oana Diana Jurchescu