International Business Machines Corporation

Samsung Electronics Co., Ltd.

Infineon Technologies Ag

Chartered Semiconductor Manufacturing Ltd (corporation)

O-sung Kwon

Sunfei Fang

Johnny Widodo

Jun-jung Kim

Thomas W Dyer

Alois Gutmann

Sang-Jine Park

Min-ho Lee

Ja-Hum Ku

Jae-eon Park

Dae-won Yang

Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.

Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon

Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least one valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.

Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques

Growing community of inventors

Wappingers Fall, NY, United States of America

O-sung Kwon