Samsung Electronics Co., Ltd.

O-lk Kwon

Myeong-Cheol Kim

Dong-Chan Kim

Bum-Soo Kim

Jae-Ho Min

Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.

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Sungnam-si, South Korea

O-lk Kwon