Electronics and Telecommunications Research Institute

O Kyun Kwon

Won Seok Han

Hyun Woo Song

Jae Heon Shin

Mi Ran Park

Young Gu Ju

Sang Hee Park

Jong Hee Kim

Jong Sool Jeong

Hyun Soo Kim

Dong Hun Lee

Ki Soo Kim

Byung Seok Choi

Byueng Su Yoo

Hye Yong Chu

Kwang Joon Kim

El Hang Lee

Ki Hong Yoon

Seok Ho Song

Kyu Seok Lee

Kyung Sook Hyun

Jung Rae Ro

Jong Heob Baek

Disclosed is an optical source device. The optical source device includes: a mode converter configured to be optically coupled with an optical fiber; a semiconductor optical amplifier coupled with the mode converter, and configured to amplify an optical signal input through the optical fiber; and an electro absorption modulator coupled to the optical amplifier, and configured to modulate the amplified optical signal and output the modulated optical signal, in which each of the semiconductor optical amplifier and the optical absorption modulator includes a heater.

Reflective optical source device

Disclosed are a method and an apparatus for selecting a wavelength by a wavelength tunable optical receiver. The method of selecting a wavelength of a wavelength tunable optical receiver includes: receiving, by the wavelength tunable optical receiver, an optical signal from a wavelength tunable optical transmitter; filtering, by the wavelength tunable optical receiver, the optical signal through a low frequency band electrical signal filter, and obtaining a low frequency signal; determining, by the wavelength tunable optical receiver, whether the low frequency signal is a valid signal based on a current value of the low frequency signal; and when the low frequency signal is the valid signal, obtaining, by the wavelength tunable optical receiver, an enable condition of a wavelength tunable optical filter through which the low frequency signal is selected, in which the low frequency signal includes a control/monitoring signal.

Method and apparatus for selecting wavelength by wavelength tunable optical receiver

Disclosed is a wavelength tunable laser apparatus, including: a first substrate configured to reflect inflow laser light, and tune a wavelength of the reflected laser light; and a second substrate configured to adjust a gain of the laser light input from the first substrate, reflect a specific wavelength of the laser light, and adjust a phase of oscillated laser light, in which the first substrate and the second substrate are formed in a single package form.

Coherent wavelength tunable laser apparatus

Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.

Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same

Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl, Ar, CH, and Hto etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Method of etching for multi-layered structure of semiconductors in group III-V and method for manufacturing vertical cavity surface emitting laser device

Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

Semiconductor optical device having current-confined structure

Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.

Method for fabricating semiconductor optical device

The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Method of fabricating long wavelength vertical-cavity surface-emitting lasers

A method for fabricating a multi-channel array optical device having uniform spacing between different wavelengths and for having precise wavelengths by accomplishing wavelength adjustment and by the forming of mirror layers simultaneously through a multi-layer binary mask and a selective oxidization process. This method is especially useful for fabricating multi-channel array optical devices including multi-channel passive filters and multi-channel surface emitting laser arrays. The method includes forming a plurality of semiconductor mirror layers on a semiconductor substrate; forming an oxidization protective layer on the plurality of semiconductor mirror layers; selectively removing the oxidization protective layer by using a binary mask to expose the semiconductor mirror layer which will adjust a wavelength; oxidizing the exposed semiconductor mirror layer.

Method for fabricating multi-channel array optical device

A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.

Multistage optical packet switching apparatus using self

A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.

Growing community of inventors

Daejeon, South Korea

O Kyun Kwon