Lg Chem, Ltd

Lg Energy Solution, Ltd.

O-Jong Kwon

Tae-Hoon Kim

Cheol-Hee Park

Kyung-Moon Ko

Yo-Han Kwon

Min-Chul Jang

Eun-Ah You

Byung-Kyu Lim

Il-Hong Kim

Hyun-Woo Choi

Myung-Jin Jung

Chan-Yeup Chung

Hee-Chang Youn

An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Electrode and method for manufacturing the same

In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: &#x3c;Chemical formula 1&#x3e;[BiMCuTOQ1TeSe]A, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0&#x2264;x&#x3c;1, 0.5&#x2264;u&#x2264;1.5, 0&#x2264;w&#x2264;1, 0.2&#x3c;a&#x3c;1.5, 0&#x2264;y&#x3c;1.5, 0&#x2264;b&#x3c;1.5, 0&#x2264;z&#x3c;1.5 and 0&#x3c;c&#x3c;0.2.

Compound semiconductor and application thereof

Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 BiMCuTOQ1TeSewhere, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0&#x2266;x&#x3c;1, 0&#x3c;w&#x3c;1, 0.2&#x3c;a&#x3c;1.5, 0&#x2266;y&#x3c;1.5, 0&#x2266;b&#x3c;1.5 and 0&#x2266;z&#x3c;1.5.

Compound semiconductors and their applications

Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 &#x3c;Chemical Formula 1&#x3e; BiTeSeInMwhere, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5&#x3c;x&#x3c;3.0, 3.0&#x2266;a&#x3c;3.5, 0&#x3c;y and 0&#x2266;z.

Compound semiconductors and their application

Growing community of inventors

Daejeon, South Korea

O-Jong Kwon