Asm IP Holding B.v.

Asm IP Holdings B.v.

Nupur Bhargava

John Tolle

Joe Margetis

Gregory Michael Bartlett

Matthew G Goodman

Robert Michael Vyne

David Kohen

Vijay D'Costa

A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH), and tin tetrachloride (SnCl), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.

Methods for forming a silicon germanium tin layer and related semiconductor device structures

A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures

A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950&#xb0; C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3&#xd7;10atoms per cubic centimeter.

Methods for forming silicon-containing epitaxial layers and related semiconductor device structures

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

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Phoenix, AZ, United States of America

Nupur Bhargava