Samsung Electronics Co., Ltd.

Nungpyo Hong

Ilyoung Han

Heejin Kim

Kyoungran Kim

Geunsik Oh

Minjae Shin

Hyunjin Lee

Mingi Hong

Chulhyun Park

Soonwon Lee

Choongbo Shim

In a method of determining a critical temperature of a semiconductor package, heat is applied to at least one semiconductor package. Temperatures of the semiconductor package are measured during the heating. Heights of the semiconductor package are also measured during the heating. A temperature of the semiconductor package measured at a point at which a height from among the measured heights of the semiconductor package is sharply increased so that swelling of the semiconductor package occurs is determined as the critical temperature of the semiconductor package. Thus, the critical temperature of the semiconductor package may be accurately determined.

Method of determining a critical temperature of a semiconductor package and apparatus for performing the same

A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

Substrate debonding apparatus

Growing community of inventors

Goyang-si, South Korea

Nungpyo Hong