Lam Research Corporation

Novy Sastrawati Tjokro

Artur Kolics

Sanjay Gopinath

Praveen Nalla

Samantha SiamHwa Tan

Yaxin Wang

Taeseung Kim

Xiaolan Ba

Nanhai Li

Sema Ermez

Ruopeng Deng

Tianhua Yu

Pragna Nannapaneni

Michal Danek

Eric H Lenz

Patrick A Van Cleemput

Seshasayee Varadarajan

Jengyi Yu

William Thie

Juwen Gao

Keren Jacobs Kanarik

Boris Volosskiy

Shruti Vivek Thombare

Gorun Butail

Xiaomin Bin

Marina Polyanskaya

Vinayakaraddy Gulabal

Ravi Vellanki

Yen-Chang Chen

Prodyut Majumder

Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

Metal deposition

Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

Tungsten deposition

Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

Rapid flush purging during atomic layer deposition

A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.

Methods for wet metal seed deposition for bottom up gapfill of features

Atomic layer etching (ALE) enables effective filling of small feature structures on semiconductor and other substrates, such as contacts and vias, by bottom-up fill, for example electroless deposition (ELD) of cobalt.

Atomic layer etching for enhanced bottom-up feature fill

A method for providing electroless deposition of a metal layer on a plurality of metal patterns, wherein a dielectric surface is between some of the plurality of metal patterns and metal residue is on the dielectric surface is provided. The dielectric surface is pretreated with an alkaline solution with a pH of at least 8 comprising at least one complexing agent, wherein the complexing agent forms a metal complex with the metal residue and wherein some metal oxide residue remains. The dielectric surface is pretreated with an acidic solution, wherein the acidic solution dissolves metal oxide residue. Metal is electrolessly deposited on the plurality of metal patterns.

Process to reduce nodule formation in electroless plating

To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.

Through silicon via metallization

A method for forming semiconductor devices on a substrate under a porous low-k dielectric layer, wherein features are formed in the porous low-k dielectric layer and wherein a barrier layer is formed over the porous low-k dielectric layer is provided. Contacts are formed in the features. The barrier layer is planarized. A cap layer is formed over the contacts, wherein the forming the cap layer provides metal and organic contaminants in the porous low-k dielectric layer. The metal contaminants are removed from the porous low-k dielectric layer with a first wet process. The organic components are removed from the porous low-k dielectric layer with a second wet process.

Porous dielectrics K value restoration by thermal treatment and or solvent treatment

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San Ramon, CA, United States of America

Novy Sastrawati Tjokro