Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Sylvania Inc.

Osram Gmbh

Osram Oledgmbh

Norwin Von Malm

Alexander F Pfeuffer

Lutz Höppel

Stefan Illek

Britta Göötz

Matthias Sabathil

Patrick Rode

Lutz Hoeppel

Frank Singer

Jürgen Moosburger

Britta Goeoetz

Siegfried Herrmann

Karl Engl

Alexander Linkov

Benjamin Krummacher

Isabel Otto

Ion Stoll

Dominik Scholz

Ralph Wirth

Georg Bogner

Frank Jermann

Stefan Grötsch

David J O'Brien

Joachim Reill

Thomas Schwarz

Herbert Brunner

Markus Heinrich Klein

Karsten Heuser

Martin Zachau

Bernhard Siessegger

Martin Rudolf Behringer

Tansen Varghese

Andreas Ploessl

Norbert Linder

Ulrich Streppel

Alan Lenef

Martin Strassburg

Tilman Ruegheimer

Darshan Kundaliya

Juergen Moosburger

Thomas Kippes

Wolfgang Mönch

Andreas Plössl

Martin Mandl

Alexander Martin

Dirk Berben

Nikolaus Gmeinwieser

Jörg Frischeisen

Florian Schindler

Dominik Schulten

Hubert Maiwald

Klaus Streubel

Angela Eberhardt

Homer Antoniadis

Markus Maute

Bernd Barchmann

Martin Brandl

Robert Kraus

Andreas Weimar

Madis Raukas

Ulrich Steegmüller

Andreas Plöβl

Warren Paul Moskowitz

Michael Brandl

Hailing Cui

Marijan Kostrun

Albrecht Kieslich

Florian Peskoller

Andreas Plößl

Philip E Moskowitz

Martin Straβburg

Markus Burger

Jeffery J Serre

Christopher Kölper

Stefan Morgott

Philipp Kreuter

Christopher Koelper

Robert Schulz

Christoph Schwarzmaier

Jörg-Erich Sorg

Thomas Bleicher

Christoph Neureuther

Manfred Url

David O'brien

Hendrik Jan Bolink

Benjamin Claus Krummacher

Markus Klein

Stefan GRÖTSCH

Antoniadis Homer

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component

In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Optoelectronic semiconductor device and method for manufacturing an optoelectronic semiconductor device

An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier and a plurality of individually controllable pixels, wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

Optoelectronic semiconductor component and 3D printer

A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

Radiation-emitting device

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, and a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators, wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region, wherein the active region comprises a plurality of independently controllable emission regions, and wherein the emission regions are at least partially aligned with the conversion regions and explicitly assigned to the conversion regions.

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Method of producing a semiconductor component

A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.

Optoelectronic component and method for producing an optoelectronic component

A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Method of producing an optoelectronic component, and optoelectronic component

A multipixel LED component includes a plurality of emission zones; a plurality of conversion elements adapted to convert radiation emitted from the emission zones into radiation of another wavelength range; a controller including a plurality of current sources and a transmitter adapted for wireless data transmission; and two electrical contact structures through which the LED component is energized, wherein the controller mechanically fixedly connects to the emission zones, each of the current sources is assigned to one of the emission zones biuniquely, the transmitter receives signals to control the current sources, the current sources are controllable according to the signals, each current source operates the emission zone assigned to it, and the number of emission zones is greater than the number of contact structures.

Multipixel led component and method of operating a multipixel led component

An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). The n-contact () extends from the p-type region () through the active zone () and into the n-type region () and is located, when viewed from above, next to the resonator path ().

Semiconductor laser and method for producing a semiconductor laser

A mount () and an optoelectronic component () with the mount () are provided, wherein the mount () comprises a moulding (), at least one through-contact () and a plurality of reinforcing fibres (), wherein the moulding () is formed from an electrically insulating moulding material (), the through-contact () is formed from an electrically conductive material, and the reinforcing fibres () produce a mechanical connection between the moulding () and the through-contact () by the reinforcing fibres () being arranged in certain regions of the moulding () and arranged in certain regions of the through-contact (). A method for producing a mount or a component with such a mount is also provided.

Carrier for a component, component and method for producing a carrier or a component

A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Ceramic conversion element, light-emitting device and method for producing a ceramic conversion element

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Nittendorf, Germany

Norwin Von Malm