Burroughs, Inc.

Norman W Jones

Mark A Vinson

Rakesh Kumar

Paul D Reynolds

Michael R Gulett

Disclosed is a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is doped opposite thereto. The method includes the steps of forming the combination of a silicide of a noble metal at the surface of the region, a layer of a barrier metal over the silicide, and a patterned conductor on a portion of the barrier metal layer which partly covers the region; etching partway through the portion of the barrier metal which is not covered by the patterned conductor; and thereafter oxidizing to completion, the portion of the barrier metal layer which is not covered by the patterned conductor and which remains after the etching step.

Method of fabricating a misaligned, composite electrical contact on a

In the disclosed method, dopant atoms of a first conductivity type are implanted into the surface of a semiconductor substrate to form a channel region of each transistor having a relatively high dopant density at a predetermined depth below the surface and a substantially lower dopant density at the surface. This eliminates reachthrough in the channel without adversely increasing the channels threshold voltage. Thereafter, dopant atoms of a second conductivity type are implanted into the substrate to form source and drain regions adjacent to the channels having a depth of less than 0.3 .mu.m below the surface. This minimizes the radius of curvature and corresponding depletion width at the respective junctions with the channel. Subsequently, a patterned insulating layer is formed on said surface at temperatures that are far below the insulating layer's flow point. This avoids diffusing the distribution of the implanted dopant atoms. Later, a layer of metallic contact is formed in an opening of the patterned insulating layer that exposes one of the source and drain regions. This layered metallic contact has a lower layer which is comprised of a material that prevents an upper layer from penetrating through the exposed source or drain region.

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Poway, CA, United States of America

Norman W Jones