Varian Associates, Inc.

Other

Applied Materials, Inc.

Applied Komatsu Technology, Inc.

Varian Semiconductor Equipment Associates, Inc.

Genus, Inc.

Ionex/hei Corporation

Norman L Turner

Kenneth Harry Purser

John M White

Harald A Enge

David Eric Berkstresser

Shinichi Kurita

Kam S Law

Robin L Tiner

Wendell T Blonigan

Ernst Keller

Russell Weldon Black

Ernest Demaray

David A Robertson

Dan Maydan

Alfred W Mak

Masato M Toshima

Frank Otto Uher

Jerry Yuen Wong

Scott C Holden

Albert Edward Litherland

Steven C Selbrede

Sien G Kang

Raymond L Chow

Peter R Hanley

Johannes J Schmitz

Frederick J Scholz

William T Lee

Robert B Conner

Alan D'Entremont

Charles R Kalbfus

John D Pollock

A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Controlling the characteristics of implanter ion-beams

A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

Broad energy-range ribbon ion beam collimation using a variable-gradient dipole

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can 'blow-up' causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

Beam neutralization in low-energy high-current ribbon-beam implanters

The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, BHwhere an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

Resonance method for production of intense low-impurity ion beams of atoms and molecules

The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining at portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Heated and cooled vacuum chamber shield

The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.

Substrate transfer shuttle

The invention is directed a vacuum processing system having improved substrate heating and cooling facilities. An evacuable chamber of the system includes a first section in which a temperature of a substrate to be processed may be increased and a second section in which the temperature of a processed substrate may be decreased. A barrier may be provided to thermally isolate the first and second sections from each other.

Vacuum processing system having improved substrate heating and cooling

The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

The invention provides an apparatus and method for performing a process on a substrate. At least two types of structures may be used to provide a flow path for a substrate so that the substrate may be moved from one processing or loading position to another. The first is a conveyor. The second is a track. The flow path may be a closed continuous loop. Each processing island has a valve for introduction and extraction of the substrate into and out of an interior of the island. The processing island may include load locks, and may include in conjunction therewith an inspection station, a CVD chamber, a PECVD chamber, a PVD chamber, a post-anneal chamber, a cleaning chamber, a descumming chamber, an etch chamber, or a combination of such chambers.

Modular substrate processing system

Growing community of inventors

Vero Beach, FL, United States of America

Norman L Turner