Vanderbilt University

Other

Norman H Tolk

Sorin Cristoloveanu

Richard F Haglund, Jr

Wei Wang

Gunter Leupke

Ron Schrimpf

Michael Lee Alles

Royal G Albridge, Jr

Halina Krzyzanowska

Joy Garnett

Bongim Jun

Kenneth J Snowdon

Robert Pasternak

A method for non-invasively probing at least one physics property of a solid material. In one embodiment, the method has the steps of splitting a photon beam into a first photon beam and a second photon beam, exposing the solid material to the first photon beam to generate a coherent acoustic phonon wave in the solid material at time t, and exposing the solid material to the second photon beam at a time t+&#x394;t, where t+&#x394;t&#x2265;t, to generate corresponding second harmonic generation signals, where from the corresponding second harmonic generation signals, the at least one physics property of the solid material is determinable.

Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation

A method for non-invasively probing at least one interface property in a layered structure having at least one interface. In one embodiment, the method includes the steps of exposing the layered structure to an incident photon beam at an incident angle to produce a reflection beam, measuring intensities of the second harmonic generation signals from the reflection beam, and identifying an initial second harmonic generation intensity and a time evolution of second harmonic generation intensity from the measured second harmonic generation intensities so as to determine the at least one interface property of the layered structure.

Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures

A method and/or device () for determining first and second band offsets () at a semiconductor/dielectric heterointerface (), which includes the semiconductor/dielectric heterointerface () exposed to incident photons () from a light source (); a detector () for generating a signal by detecting emitted photons () from the semiconductor/dielectric heterointerface (); and an element () for changing the energy of incident photons () to monitor the first and second band offsets ().

Contactless optical probe for use in semiconductor processing metrology

A method and apparatus for producing a neutral beam of oxygen or other gas for use in testing of materials and for heavy particle etching is disclosed. A beam of positively ionized gas is accelerated and filtered to produce a beam having ions of a selected energy. The beam is decelerated to an energy of the level required and directed toward a photo emissive surface at a grazing incidence angle causing electrons to be contributed to the beam thereby neutralizing part of the ionized atoms and molecules of the beam. The beam is directed through electrostatic deflection plates which separate out remaining ionized particles producing a neutral beam.

Method and apparatus for producing neutral atomic and molecular beams

Growing community of inventors

Brentwood, TN, United States of America

Norman H Tolk