International Rectifier Corporation

Norman Glyn Connah

Mark Pavier

Ajit Dubhashi

Alberto Guerra

Hazel Deborah Schofield

Jorge Cerezo

George Pearson

Mark Steers

Phillip Adamson

A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Semiconductor device packages with substrates for redistributing semiconductor device electrodes

A power module that includes a power circuit assembly in which power components are electrically and mechanically connected without wires.

Power module

A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.

Device packages having a III-nitride based power semiconductor device

A device package includes at least one semiconductor device having at least one electrode of an elongated length. The device package also includes at least one conductive pad that extends parallel to the elongated length of the electrode. A terminal lead may be integral with the conductive pad. A plurality of wirebonds of about the same length may electrically connect the conductive pad and the elongated electrode of the semiconductor device. As another alternative, a second semiconductor device may be mounted to the conductive pad and a plurality of wirebonds may electrically connect this second device and the elongated electrode of the first semiconductor device.

Wirebonded device packages for semiconductor devices having elongated electrodes

A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.

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Glossop, United Kingdom

Norman Glyn Connah