Lsi Logic Corporation

Lsi Corporation

Norman E Mause

Richard Thomas Schultz

Robert D Waldron

Sean Christopher Erickson

Kevin Roy Nunn

Michael J Saunders

Larry Greenhouse

C Chip Brewster

A system and method for designing a complex electronic circuit by simulating blocks of the circuit using various simulators to produce a net list, designing the physical layout of the circuit using a layout tool that produces a layout verses schematic reference file, mapping the reference file to the net list to create a mapping file, and analyzing the mapping file to verify that the layout meets various criteria. Each block may be verified using simulation tools that are appropriate for that piece of the overall circuit, and using conditions that may maximize the strain on the circuit. The results from the simulations are compared to the physical layout to determine if the physical layout is able to properly conduct the electrical signals.

Interconnect integrity verification

A method of generating a schematic driven layout for an integrated circuit design includes steps of: (a) receiving as input a representation of a integrated circuit design comprising a hierarchy of blocks; (b) selecting a block in the hierarchy of blocks that requires a physical design and that contains no missing components; (c) generating a physical design for the selected block so that the selected block is no longer a missing component of any other block; and (d) repeating steps (b) and (c) until a physical design has been generated for each block in the hierarchy of blocks.

Method of generating a schematic driven layout for a hierarchical integrated circuit design

A region on a substrate contains multiple transistors in parallel that share a single salicided polysilicon gate electrode. Above or below the gate electrode are formed multiple plugs of refractory material along the length of the gate electrode. The multiple plugs of refractory material electrically interconnect the gate signal line and the salicided polysilicon gate electrode. The plug material is selected to minimize the work function between it and the salicided polysilicon gate electrode.

Low gate resistance layout procedure for RF transistor devices

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Ft. Collins, CO, United States of America

Norman E Mause