Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Noriyuki Yoshikawa

Kunihiko Kanazawa

Hideki Takehara

Masanori Minamio

Toshiyuki Fukuda

Kazuki Tateoka

Hiroyuki Ishida

Seiichi Nakatani

Shinichi Ijima

Hiroaki Fujimoto

Hideyuki Nakanishi

Yoshihiro Tomita

Kouki Yamamoto

Kenichi Itou

Yoshinobu Kunitomo

Noboru Takeuchi

Akihisa Sugimura

Hisanori Ishiguro

Kazuhiko Ohashi

Junya Furuyashiki

Susumu Tsumura

Toshimasa Itooka

Satoshi Makioka

Hiroki Utatsu

An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes: a first lead having an element mounting portion; a second lead located in a same plane as the first lead, with a predetermined space left between the first lead and the second lead; a molding encapsulant made of a resin for fixing the leads; and a semiconductor element affixed to a top surface of the element mounting portion of the first lead. The molding encapsulant covers at least part of each of upper and lower surfaces of the leads. A resin injection hole mark, which is a mark of a hole through which the encapsulant has been injected, is left on the encapsulant, and part of the resin injection hole mark is located above the first lead or the second lead, and the remaining part of the resin injection hole mark is located above a space between the first lead and the second lead.

Semiconductor device and electronic equipment using same

By increasing the width of a lead terminalconnected to a die padin the vicinity of the die padand forming a slitand a projecting plate in the lead terminal in the region where resinis formed, it is possible to ensure the holding strength of the lead terminal by the resin, as well as ensuring the strength of the lead terminal during the manufacturing process and achieving a reduction in thickness.

Semiconductor device and optical pickup device

A semiconductor laser apparatus of the present invention includes: a semiconductor laser chiphaving an electrodeformed on a surface of the semiconductor laser chip; a heat sinkfor the semiconductor laser chip; a submountdisposed between the semiconductor laser chipand the heat sinkand bonded to the semiconductor laser chipand the heat sink; and recessed marksformed on the surface of the semiconductor laser chipby partially removing the electrode, wherein the semiconductor laser chipis longer in the resonator direction than in a direction orthogonal to the resonator direction, and the recessed marksare disposed within a predetermined distance from each of the front and rear end faces of the semiconductor laser chip.

Semiconductor laser apparatus

An optical element mounted on a wiring board is sealed by a sealing resin except an optical function region. Wires connecting the wiring board with the optical element are also sealed by the sealing resin. The optical function region is exposed as a bottom surface of a recess whose side surface is formed by the sealing resin. A boundary portion between the side surface of the recess and a top surface portion and a boundary portion between the side surface and bottom surface of the recess have a rounded shape.

Optical device for reducing disturbance light and manufacturing method thereof

A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than &#x2212;15&#xb0; C. and not more than &#x2212;5&#xb0; C.

Semiconductor device

A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

Semiconductor device, electronic apparatus comprising the same, and method for fabrication of substrate for semiconductor device used therein

An optical semiconductor device includes a semiconductor laser chip, a base for mounting the semiconductor laser chip and a solder layer sandwiched between the top surface of the base and the bottom surface of the semiconductor laser chip. The semiconductor laser chip is warped in upward convex shape.

Optical semiconductor device

An optical device cavity structure includes: insulator layers and metal layers alternately layered on one another; a first terminal section which is formed on a mounting surface to be mounted on a wiring substrate and which is electrically connected to the wiring substrate; a cavity portion having a generally rectangular opening formed in a central portion of the upper surface; and a light-transmitting member placement section formed on the upper surface surrounding the opening for receiving a light-transmitting member thereon, wherein the light-transmitting member is for transmitting therethrough light to be received by, or light emitted from, an optical element chip.

Optical device cavity structure, optical device, and method for manufacturing an optical device cavity structure

In the present radio frequency device, a radio frequency circuit part and a transmission line are disposed on the top surface of a circuit board on the surface of which a ground pattern is provided, and a metal shielding cap is fixed to the circuit board so as to cover the radio frequency circuit part and the transmission path. The metal shielding cap includes: a top plate disposed above the radio frequency circuit part and substantially parallel to the circuit board; a grounded side wall being provided so as to hang down from a part of an edge of the top plate, having a spring property and being joined to the ground pattern of the circuit board, and a side wall is open except for the grounded side wall.

Radio frequency device

In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

High-frequency module and method for manufacturing the same

One side of a ceramic multilayer board is attached to a resin film with adhesive, the resin film is mounted on a mold for resin sealing having a cavity provided in desired position, the position of the board is controlled by pressing against a portion of the resin film by a portion of the mold for sealing, and thereafter sealing is conducted by filling an epoxy resin into the cavity. The thus prepared semiconductor device has a rear face on which electrodes for connecting to outside are exposed, and the sealing resin is formed so as to be flush with respect to the rear face of the board, surround the periphery of the board, and form a cross section in a rectangular shape. With this configuration, the semiconductor device free from a crack can be sealed with resin.

Method of manufacturing semiconductor device with ceramic multilayer board

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Growing community of inventors

Osaka, Japan

Noriyuki Yoshikawa