National Institute of Advanced Industrial Science and Technology

Noriyuki Uchida

Toshihiko Kanayama

Naoya Okada

A compound film of tungsten and germanium useful for semiconductor devices, a semiconductor device using the compound film and a method and an apparatus for manufacturing the compound film. Various embodiments include a compound film of tungsten and germanium, which has a germanium/tungsten composition ratio of 0.2 or more and less than 6 and includes an optical energy gap. The compound film of tungsten and germanium is produced on a substrate by causing a material gas of tungsten and a material gas of germanium to undergo a chemical reaction in at least one of a region in a gas phase and a region on the substrate. Various embodiments include a semiconductor device including a stack structure in which a semiconductor substrate, a compound film of tungsten and germanium having a germanium/tungsten composition ratio of 1 or more and 3.2 or less, and a metal electrode are laminated in this order.

Compound film of tungsten and germanium, and semiconductor device

The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.

Growing community of inventors

Ibaraki, Japan

Noriyuki Uchida