Hitachi Cable, Inc.

International Superconductivity Technology Center

Hokkaido Electric Power Company, Inc.

Fujikura Limited

The Kansai Electric Power Co., Inc.

Kyushu Electric Power Co., Inc.

Mitsubishi Cable Industries, Ltd.

Tokyo Gas Company Limited

Noriyuki Tatsumi

Jiro Tsujino

Shoji Tanaka

Atsushi Kume

Tatsuya Tonogi

Yasuji Yamada

Yuh Shiohara

Minoru Tagami

Kanshi Ohtsu

Yasuo Kanamori

Masaru Nakamura

Shigenori Yuhya

Kei Kikuchi

Yoh Shiohara

There is provided a silicon device structure, comprising: a P-doped ntype amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped ntype amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Silicon device structure, and sputtering target used for forming the same

An interconnecting structure production method includes providing a substrate, forming a semiconductor layer on the substrate, forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant, forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein, forming an alloy layer on the oxide layer, and forming an interconnecting layer on the alloy layer.

Interconnecting structure production method, and interconnecting structure

A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.

Wiring structure and method for fabricating the same

A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer.

A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Composite metal oxide material

A method for growing a superconductive film, comprising:

Method for preparing an oxide superconducting tape

Method of producing composite metal oxide material

The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.

Process for depositing oxide film on metallic substrate by heat plasma

Growing community of inventors

Kasumigaura, Japan

Noriyuki Tatsumi