Sumitomo Bakelite Company Limited

Noriyuki Takasaki

Kenji Takayama

Kazuo Noda

Yoshiyuki Anai

The present invention provides a process for producing an epoxy resin composition for semiconductor encapsulation which, when used in encapsulation of a semiconductor chip, can minimize voids appearing in the semiconductor device obtained. That is, the present invention provides a process for producing an epoxy resin composition for semiconductor encapsulation, which comprises premixing raw materials containing at least an epoxy resin, a phenolic resin, a curing accelerator and an inorganic filler, then grinding the resulting premix using a grinder to obtain a ground material having such a particle size distribution that particles having particle diameters of 250 &mgr;m or more are 10% by weight or less, particles having particle diameters of 150 &mgr;m to less than 250 &mgr;m are 15% by weight or less and particles having particle diameters of less than 150 &mgr;m are 75% by weight or more, and melt-kneading the ground material under a reduced pressure, or melt-kneading the ground material and then exposing the resulting molten material to a reduced pressure.

Process for production of epoxy resin composition for semiconductor encapsulation, epoxy resin composition for semiconductor encapsulation, and semiconductor device

The present invention provides a process for producing an epoxy resin molding material for semiconductor encapsulation, which is very low in voids generation; a molding material produced by the process; and a semiconductor device obtained by encapsulation with the molding material. That is, the present invention provides a process for producing an epoxy resin molding material for semiconductor encapsulation, which comprises premixing a composition containing at least an epoxy resin, a phenolic resin and an inorganic filler, then subjecting the resulting mixture to grinding by a grinder to obtain a powder having such a particle size distribution that the amount of particles having particle diameters of 250 &mgr;m or more is 10% by weight or less, the amount of particles having particle diameters of 150 &mgr;m to less than 250 &mgr;m is 15% by weight or less, and the amount of particles having particle diameters of less than 150 &mgr;m is 75% by weight or more, and thereafter subjecting the powder to melt kneading; a molding material produced by the process; and a semiconductor device obtained by encapsulation with the molding material.

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Tokyo, Japan

Noriyuki Takasaki