Rohm Co., Ltd.

Pioneer Corporation

Ngb Corporation

Noriyuki Shimoji

Takanori Ozawa

Masataka Tsuruta

Suguru Okuyama

Hidemi Takasu

Yoshiaki Oku

Hironobu Nakao

Tomohiro Date

Takuya Yonezawa

Yoshikazu Fujimori

Takashi Naiki

Masaki Takaoka

Norikazu Ito

Takaaki Fuchikami

Hiroyuki Yano

Masaya Nogi

Tatsuya Suzuki

Shinsuke Ifuku

Eitaro Kurokawa

Masato Moriwake

Hiroki Kato

Kentaro Abe

A transducer includes a substrate containing silicon and a piezoelectric element disposed on the substrate. The substrate includes a film body including a first surface and a second surface facing in mutually opposite directions in a thickness direction of the substrate and a frame body surrounding the film body when the film body is viewed from the thickness direction. The piezoelectric element is disposed on the first surface of the film body. A part of an outer edge of the film body when viewed from the thickness direction forms a connection portion connected to the frame body, and a remaining part of the outer edge excluding the connection portion is separated from the frame body. The substrate includes a protrusion protruding in the thickness direction from a region including at least a part of the remaining part of the outer edge of the second surface.

Transducer

A piezoelectric element includes a single crystal piezoelectric film, wherein the single crystal piezoelectric film includes an aluminum nitride film and wherein a full width at half maximum at (002) diffraction peak of the aluminum nitride film is smaller than 1.00 degree.

Piezoelectric element, method of manufacturing the same, surface acoustic wave element, and piezoelectric thin film resonance element

A transducer includes: a film support portion having a hollow portion; a vibration film displaceable in a film thickness direction; a piezoelectric element, the piezoelectric element including a pair of electrodes and a piezoelectric film; and in regions overlapping the hollow portion, a plurality of first regions having a first total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, and a plurality of second regions having a second total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, the second total film thickness being different from the first total film thickness. The first regions and the second regions are alternately arranged, and one of the first regions is adjacent to a connection portion between the film support portion and the vibration film.

Transducer and electronic device

A transducer includes: a piezoelectric element; and a film body including a film support portion having a hollow portion, and a vibration film connected to the film support portion and displaceable in a film thickness direction, the film body having the piezoelectric element stacked over the vibration film. The piezoelectric element includes: a first stacked body having a first pair of electrodes and a first piezoelectric film sandwiched between the first pair of electrodes; and a second stacked body having a second pair of electrodes and a second piezoelectric film sandwiched between the second pair of electrodes, the second stacked body being separated from the first stacked body.

Transducer and driving method thereof, and system

An inkjet printing headincludes a pressure chamber, a movable film formation layerthat includes a movable filmA defining a top surface portion of the pressure chamber, and a piezoelectric elementthat is formed to contact a surface of the movable filmA at an opposite side from the pressure chamberand having a peripheral edge receded further toward an interior of the pressure chamberthan the movable filmA in plan view. The piezoelectric elementincludes a lower electrodeformed on a surface of the movable film formation layerat the opposite side from the pressure chamber, an upper electrodedisposed at an opposite side from the movable film formation layerwith respect to the lower electrode, and a piezoelectric filmprovided between the upper electrodeand the lower electrode, and the upper electrodehas a thin portionat least at a portion of a peripheral edge portion.

Piezoelectric film utilization device

An organic EL device includes a substrate, a first electrode layer formed on the substrate, an organic EL layer formed on the first electrode layer, and a second electrode layer formed on the organic EL layer. A distribution characteristic of light emitted from the first electrode layer into the substrate has a luminance in a direction of a first angle of 20 to 50 degrees measured with respect to an axis perpendicular to the substrate that is relatively high as compared to luminance in other angular directions.

Organic EL device having a high light output

An organic electroluminescence device includes: a first electrode layer; an insulating film arranged on the first electrode layer; an organic layer that is arranged on the insulating film, and is in contact with the first electrode layer at an opening portion provided in the insulating film; a second electrode layer arranged on the organic layer; and a metal layer that is in contact with an end surface of the organic layer and an end surface of the second electrode layer, and is arranged on the second electrode layer.

Organic Electroluminescence device including organic layer arranged between transparent electrode and metal electrode, and manufacturing method thereof

A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 &#x3bc;m-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 &#x3bc;m-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.

Fiber composite material and method for manufacturing the same

A back light system and a liquid crystal display device, which can reduce the power consumption substantially, are provided. The power consumption can be substantially reduced by providing a plurality of light-emitting dividing parts to which area division of the light emitting surface which illuminates with light towards a liquid crystal panel is performed, and controlling the luminescent brightness in the light-emitting dividing parts according to the corresponding display image of a display area in the liquid crystal panel.

Back light system and liquid crystal display device using the back light system

A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.

Hybrid organic light-emitting transistor device and manufacturing method thereof

An organic EL element (Al) includes an anode () and a cathode () which are arranged opposite to each other, and an organic layer () intervening between the anode () and the cathode () and including a light emitting layer (). The cathode () is made of MgAg alloy and has a thickness of not more than 200 &#x212b;. Preferably, the thickness of the cathode () is in the range of 40 to 100 &#x212b;.

Organic el element, organic el display device, and process for producing organic el element

An organic luminescent device according to the present invention includes a substrate, an organic luminescent layer, and a reflection electrode. Here, the substrate has first and second principal surfaces opposed to each other; the organic luminescent layer is arranged on the first principal surface of the substrate, and is held between a pair of electrodes at least one of which is a transparent electrode; and the reflection electrode is adjacent to a luminescent area of the organic luminescent layer and is arranged on a front surface or a back surface of the transparent electrode. The transparent electrode is arranged on the first principal surface of the substrate, while the reflection electrode is arranged on the transparent electrode. The second principal surface of the substrate is formed into a rough surface at least on its part opposed to the reflection electrode. This configuration improves light extraction efficiency.

Organic luminescent device

An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.

Electromagnetically protected organic thin film transistor

A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width Wis formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width Wthereof is narrower than a width Wof the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width Wand position of an opening in the upper surface of the substrate can be controlled.

Semiconductor device and method of producing the same

A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width Wis formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width Wthereof is narrower than a width Wof the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width Wand position of an opening in the upper surface of the substrate can be controlled.

Growing community of inventors

Kyoto, Japan

Noriyuki Shimoji