Hitachi, Ltd.

Renesas Technology Corp.

Other

Japan Display Inc.

Hitachi-kokusai Electric Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Renesas Eastern Japan Semiconductor, Inc.

Noriyuki Oroku

Kosuke Inoue

Asao Nishimura

Naoya Kanda

Yoshihide Yamaguchi

Takamichi Suzuki

Hiroshi Hozoji

Ichiro Anjo

Shigeharu Tsunoda

Hiroyuki Tenmei

Madoka Minagawa

Kenji Ujiie

Akira Yajima

Yasuyuki Nakajima

Teru Fujii

Masayuki Morishima

Hidehiko Kando

Hitoshi Oka

Fumio Morita

Masataka Fujiki

Yuichirou Tanaka

Hiroshi Kikuchi

Minoru Ikeda

Hiroshi Maki

Kouichi Uesaka

Takashi Wada

Isao Takahashi

Nobuaki Nakasu

Takeshi Arai

Toyohide Hamada

Tadao Edamura

Kazumi Adachi

Naoki Takehara

Masayasu Akaiwa

An object of the present invention is to provide a method for repairing a display device according to which a wide variety of regions can be repaired in various ways using various materials, as well as an apparatus for the same. The present invention provides a repairing apparatus for repairing a pattern defect on a surface of a substrate in a display device where an electronic circuit pattern having the above described pattern defect is formed, characterized by having a plasma irradiation means for repairing the above described pattern defect through local irradiation of a region including the above described pattern defect with plasma.

Method for repairing display device and apparatus for same

A circuit chip having a loop-shaped antenna coil on a main surface and a tag sheet having an antenna pattern on a main surface are prepared, and the circuit chip is mounted on the main surface of the tag sheet so as not to place over the antenna pattern. The circuit chip is placed closely to the antenna pattern, and at least the half of the main surface is desirably faced against the antenna pattern. Thus, signals and/or power can be securely exchanged between the circuit chip (or antenna coil) and the antenna pattern. Therefore, a high-performance and rigid RFID tag can be obtained by roughly aligning the circuit chip and the tag sheet.

RFID tag

For protecting information stored in an RFID chip and ensuring its authenticity, radio communication between the RFID chip and an external terminal is positively interrupted when a seal type RFID tag including the RFID chip is peeled from an adherend, while ensuring solidity integrity when the RFID tag is put on the adherend. In the seal type RFID tag which includes the RFID chip fixed on a mounting surface of a base member having an adhesive layer applied thereto and which is put on the adherend by using the adhesive layer, an antenna formed on a main surface of the RFID chip is embedded in adhesive layers together with the RFID chip and an adhesive bonding strength between the antenna and the adhesive layer is made greater than a joining strength between the antenna and the RFID chip.

The present invention provides a sheet-shaped material containing an RFID thread. The RFID thread comprises a strip-shaped film onto one side of which a semiconductor chip containing plural bits of memory and provided with an antenna wire is bonded. The strip-shaped film has plural openings formed therethrough except where the semiconductor chip is bonded. Since intertwining occurs between paper fibers via the openings, the RFID thread is strongly fixed in the paper.

RFID thread and sheet-shaped material using it

A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide &#x3b1;-ray shielding of the semiconductor device.

Semiconductor device and method for producing the same

A method of manufacture of a semiconductor device can speedily peel extremely thin chips which are laminated to an adhesive tape without generating cracks or chippings. In this regard, the head of a vibrator is brought into contact with a back surface of an adhesive tape to which a plurality of semiconductor chips are laminated. By applying longitudinal vibrations having a frequency of 1 kHz to 100 kHz and an amplitude of 1 &#x3bc;m to 50 &#x3bc;m, the chip is peeled from the adhesive tape. In applying the longitudinal vibrations to the adhesive tape, a tension in a horizontal direction is applied to the adhesive tape.

Method of manufacturing a semiconductor device

A semiconductor device is provided which enables a flip chip connection without use of underfill. The semiconductor device includes a semiconductor element having circuit electrodes and a circuit surface coated with a protecting film. A stress relaxation layer is provided by coating a cured thermoplastic resin onto the protecting film of the circuit surface in a manner which leaves the circuit electrodes exposed and curing it and having an inclination in the edge portion thereof. A wiring layer with wirings is connected to each of the circuit electrodes and disposed so as to make an electrical connection from the circuit electrodes, via the edge portion of the stress relaxation layer, and to a desired portion on the surface of the stress relaxation layer. A protecting film is provided thereon, and an external connection terminal is also provided.

Semiconductor device and method for manufacturing the same and semiconductor device-mounted structure

In the conventional bump forming method that can be applied to a semiconductor device in which a large number of bumps are required to be formed, there are various limitations on the material of which the bumps are made, due to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls and a tool having a large number of through-holes are used, and under the condition that the through-holes of the tool are aligned with the pads of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps.

Method of forming bumps

A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.

Semiconductor apparatus including insulating layer having a protrusive portion

A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.

Method for producing a semiconductor device

Forming solder bumps each having a constant height by surely supplying onto each of electrode pads a solder ball corresponding to a predetermined volume while omitting Au plating performed on the electrode pads onto which the solder bumps are to be formed. For achieving the forming of the solder bumps, the adhesive film is formed instead of the Au plating, the adhesive film being used as an oxidation-preventing film and as film for temporarily fixing each of the solder balls, the solder balls being supplied by stencil mask or the vacuum adsorbing mask.

Method of producing electronic part with bumps and method of producing electronic part

A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.

Semiconductor device and method for manufacturing the same

The fluid treatment apparatus, as disclosed, comprises upper and lower Bernoulli-plates and each of which includes a metal plate provided on overall outer surface thereof. On each of the metal plates there is arranged a spiral-shaped circulating pipe through which a heating medium or a cooling medium are circulated so as to rapidly heat or cool the upper and lower Bernoulli-plates. During the treatment of a wafer by the apparatus, the upper and lower Bernoulli-plates are disposed in parallel with each other to define a narrow gap therebetween while a clearance between the wafer and the upper Bernoulli-plate and a clearance between the wafer and the lower Bernoulli-plate are kept to be equal to each other. Thus, the present invention can achieve various purpose such as a time saving for the cleaning, reduction of consumption of the cleaning liquid and inhibition of cleaning irregularity.

Plate-like specimen fluid-treating apparatus and plate-like specimen fluid-treating method

In the conventional bump forming method that can be applied to a semiconductor device in which a large number of bumps are required to form, there are various limitations to the material of which the bumps are made, to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls and a tool having a large number of through-holes are used, and under the condition that the through-holes of the tool are aligned with the pads of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps.

Growing community of inventors

Takasaki, Japan

Noriyuki Oroku