Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Other

Noriyuki Miura

Hirokazu Hayashi

Tadashi Chiba

Kouichi Fukuda

Atsushi Yabata

Shoji Kawahito

Keita Yasutomi

A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.

Semiconductor device

A method of manufacturing a semiconductor device and a method of manufacturing a solid-state imaging device, including preparing an SOI wafer in which a silicon layer is disposed on an FZ wafer that is a silicon wafer manufactured according to an FZ method, with an insulation layer being interposed between the silicon layer and the FZ wafer, removing a part of the silicon layer, as an element isolation region, to form a trench for division of the silicon layer, and forming plural circuit elements that each include at least a part of the silicon layer other than the element isolation region, and which are isolated from each other by the element isolation region.

Method of manufacturing semiconductor device and method of manufacturing solid-state imaging device

A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are of mutually opposite conductivity types, and alternate with one another in the direction paralleling the width of the gate electrode. The half-width of each source diffusion region is equal to or less than the length of the gate electrode plus the half-length of the drift region.

A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

Photodiode

A light detecting apparatus includes an SOI substrate. In the SOI substrate, a semiconductor layer and a silicon substrate are laminated via an insulating layer. The semiconductor layer has a light receiving unit and a circuit unit formed therein. The light detecting apparatus also includes an interlayer insulating film formed on a first main surface of the SOI substrate. The light detecting apparatus also includes a front surface circuit wiring embedded in the interlayer insulating film. The light detecting apparatus also includes a front surface pseudo-wiring having a grid unit. The grid unit has at least one opening allowing passage of a light of a predetermined wavelength range to the light receiving unit. The light detecting apparatus also includes a rear surface circuit wiring and a rear surface pseudo-wiring formed on a second main surface of the SOI substrate. The light detecting apparatus also includes a penetration circuit wiring that connects the front surface circuit wiring to the rear surface circuit wiring. The light detecting apparatus also includes a penetration pseudo-wiring that electrically connects the front surface pseudo-wiring to the rear surface pseudo-wiring. The light receiving unit is surrounded by the front surface pseudo-wiring, the rear surface pseudo-wiring, and the penetration pseudo-wiring.

Light detecting apparatus

A semiconductor device which comprises an SOI substrate having an insulating layer between a semiconductor substrate layer and a semiconductor layer in a surface of which a semiconductor element is formed, and at least one external terminal provided, via an insulating film, on a surface of the semiconductor substrate layer and electrically connected to the semiconductor element. The semiconductor device further comprises a contact portion constituted by a conductive film reaching through the insulating film to electrically connect to the semiconductor substrate layer; and a potential fixing electrode provided, via the insulating film, on the surface of the semiconductor substrate layer and connected to the contact portion.

Semiconductor device and fabrication method of the same

The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus

A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.

Photodiode and photo IC using same

Method of producing photodiode and the photodiode

A photodiode that can separately detect the intensities of the three wavelength ranges of ultraviolet light of 400 nm or below includes an insulating layer; and a plurality of silicon semiconductor layers having different thicknesses formed on the insulating layer, wherein each of the plurality of silicon semiconductor layers has a low-concentration diffusion layer formed by diffusing one of a P-type impurity or an N-type impurity therein with a low concentration; a P-type high-concentration diffusion layer formed by diffusing a P-type impurity therein with a high concentration; and an N-type high-concentration diffusion layer formed by diffusing an N-type impurity therein with a high concentration, and wherein the P-type high-concentration diffusion layer and the N-type high-concentration diffusion layer formed in a respective one of the plurality of silicon semiconductor layers are arranged to face each other with the low-concentration diffusion layer interposed there between.

Photodiode arrangement

A photodiode comprises a support substrate, an insulating layer formed over the support substrate, a silicon semiconductor layer formed over the insulating layer and having a device forming area and device isolation areas which surround the device forming area, a device isolation layer formed in the device isolation areas, a P+ diffusion layer formed in the device forming area close to one edge lying inside the device isolation layer by diffusing a P-type impurity in a high concentration, an N+ diffusion layer spaced away from the P+ diffusion layer and formed in the device forming area close to the other edge opposite to the one edge of the device isolation layer by diffusing an N-type impurity in a high concentration, a low concentration diffusion layer formed in the device forming area located between the P+ diffusion layer and the N+ diffusion layer by diffusing an impurity of the same type as either one of the P+ diffusion layer and the N+ diffusion layer in a low concentration, and silicide layers respectively formed above the P+ diffusion layer and the N+ diffusion layer with being spaced away from a boundary between the low concentration diffusion layer and the P+ diffusion layer and a boundary between the low concentration diffusion layer and the N+ diffusion layer.

Photodiode and photo integrated circuit having the same

Impurity ions are implanted into the silicon layer of an SOI substrate to achieve an ion concentration distribution which inhibits for a reduction in threshold voltage (Vth-rolloff) as a gate length is reduced. A reduction in potential barrier which runs from a drain region side is effectively inhibited to counter short channel effects resulting from a reduction in gate length attendant with miniaturization of SOI-MOSFETs.

Method of manufacturing semiconductor device and semiconductor device

A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI layer lying under the buried insulating film has a body concentration of 10cm.

Growing community of inventors

Kanagawa, Japan

Noriyuki Miura