Hitachi, Ltd.

Noriyuki Lee

Digh Hisamoto

Ryuta Tsuchiya

Akira Sugawara

Toshiyuki Mine

Hiroyuki Yamamoto

Satoru Akiyama

Shinichi Saito

Gou Shinkai

A semiconductor device includes an active region famed in a semiconductor layer formed on an insulating film famed in a semiconductor substrate and having a first extension portion extending in a first direction and a second extension portion extending in a second direction intersecting with the first direction, a first diffusion layer electrode of a first conductivity type provided in the first extension portion, second and third diffusion layer electrodes of a second conductivity type provided in the second extension portion so as to interpose a first connecting portion connecting the first extension portion and the second extension portion, a first gate electrode famed on the first extension portion between the first diffusion layer electrode and the first connecting portion through an insulating film famed on the semiconductor layer, and a second gate electrode famed on the first connecting portion through the insulating film famed on the semiconductor layer.

Semiconductor device comprising plurality of diffusion layer electrodes with different conductivities and gate electrodes

The first layer includes a first gate electrode array disposed in the first direction to control the qubits of the qubit string, and a second gate electrode array disposed in the first direction to control the inter-qubit interaction of the interaction string. The second layer includes a third gate electrode array disposed in the second direction, and a fourth gate electrode array disposed in the second direction adjacently to the third gate electrode array. The third and the fourth gate electrode arrays control a part of the multiple qubits, and a part of the multiple inter-qubit interactions, respectively.

Quantum information processing device

To realize a focused-ion-beam machining apparatus capable of machining a thin sample with a wide area and a uniform film thickness and a needle-like sample with a sharp tip, in a focused-ion-beam machining apparatus including: an ion source (); an electronic lens () focusing an ion beam extracted from the ion source () and irradiating the ion beam to a sample (); and a sample holder () holding the sample (), the sample holder () is provided with a shield electrode () arranged in a manner such as to cover the sample (), and the sample () and the shield electrode () are insulated from each other in a manner such that voltages can be applied to them separately from each other.

Sample holder and focused-ion-beam machining device provided therewith

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Tokyo, Japan

Noriyuki Lee